參數(shù)資料
型號(hào)： RPI-129B
元件分類： 開(kāi)關(guān)
英文描述： 1.2 mm SLOT WIDTH, 1 CHANNEL SLOTTED OPTICAL SWITCH TRANSISTOR OUTPUT
封裝： ULTRA MINIATURE, DIP-4
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 66K
代理商： RPI-129B
RPI-129B
Photointerrupter, Ultraminiature DIP type
Applications
DSC(Digital steal camera)
DVC(Digital video camera)
Digital handy phone
Features
1) Ultraminiature DIP type.
2) Gap 1.2mm.
Absolute maximum ratings (Ta
=25°C)
Electrical and optical characteristics (Ta
=25°C)
Electrical and optical characteristics curves
Dimensions (Unit : mm)
Notes:
1. Unspecified tolerance
shall be
±0.2 .
2. Dimension in parenthesis are
show for reference.
Delay time
Rise time (time for output current to rise from
10% to 90% of peak current)
Fall time (time for output current to fall from 90%
to 10% of peak current)
td
:
t r
:
t f
:
Fig.11 Response time measurement circuit
td
tr
tf
10%
90%
RL
VCC
Input
Output
Fig.1 Relative output current vs.
distance ( )
RELATIVE
COLLECTOR
CURRENT
:
I
C
(%)
DISTANCE : d
(mm)
0
1.0
2.0
0.5
1.5
2.5
1
1.2
0.6
0.8
0.2
0.4
0
1
1.2
0.6
0.8
0.2
0.4
0
RELATIVE
COLLECTOR
CURRENT
:
I
C
(%)
DISTANCE : d
(mm)
0
1.0
2.0
0.5
1.5
Fig.4 Relative output current vs.
distance ( )
Fig.2 Forward current falloff
20
0
20
40
60
80
100
10
50
40
30
20
0
AMBIENT TEMPERATURE : Ta (
°C)
FORWARD
CURRENT
:
I
F
(
mA
)
COLLECTOR
CURRENT
:
I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE: VCE
(V)
Fig.10 Output characteristics
48
610
2
0
2
1
3
4
5
6
7
IF=30mA
25mA
20mA
15mA
10mA
5mA
Fig.8 Response time vs.
collector current
COLLECTOR CURRENT : IC
(mA)
10
0.05 0.1
1
10
100
RESPONSE
TIME
:
t
r
(
s)
RL=100
RL=1k
RL=500
Fig.9 Dark current vs.
ambient temperature
AMBIENT TEMPERATURE : Ta
(
°C)
DARK
CURRENT
:
I
CEO
(nA)
0
25
50
75
100
25
0.1
1
10
100
1000
VCE
=20V
VCE
=10V
VCE
=30V
Fig.6 Relative output vs. ambient
temperature
RELATIVE
COLLECTOR
CURRENT
:
Ic
(
%
)
AMBIENT TEMPERATURE : Ta (
°C)
25
0
25
50
75
100
80
60
40
20
0
VCE
=5V
IF
=20mA
Fig.7 Collector current vs.
forward current
COLLECTOR
CURRENT
:
I
C
(mA)
FORWARD CURRENT : IF
(mA)
0
5
10
15
20
25
0
1
2
3
4
5
Fig.3 Forward current vs. forward
voltage
FORWARD
CURRENT
:
I
F
(mA)
FORWARD VOLTAGE : VF (
V)
0
10
20
30
40
50
0.4
0.2
0.6
0.8
1.0
1.2
1.4
1.6
1.8
75
°C
50
°C
25
°C
0
°C
25°C
Fig.5 Power dissipation / collector power
dissipation vs. ambient temperature
POWER
DISSIPATION
/
COLLECTOR
POWER
DISSIPTION
:
P
D
/P
C
(mW)
AMBIENT TEMPERATURE : Ta (
°C)
20
0
40
60
80
20
100
0
20
40
60
80
100
120
PD PC
Parameter
Cut-off frequency
Non-coherent Infrared light emitting diode used.
Peak light emitting wavelength
A
B
Rise time
Fall time
Symbol
VF
IR
ICEO
λP
IC
fC
IC
VCE(sat)
tr
tf
Min.
0.95
0.45
0.95
Typ.
1.3
800
10
Max.
1.6
10
0.5
4.95
2.33
4.95
0.4
Unit
VIF
=50mA
IF
=50mA
VR
=5V
VCE
=10V
VCE
=5V, IF=20mA
IF
=20mA, IC=0.1mA
VCC
=5V, IF=20mA, RL=100
VCE
=5V, IF=20mA
A
nm
mA
V
s
10
s
1
MHz
950
nm
Conditions
Maximum sensitivity wavelength
λP
800
nm
This product is not designed to be protected against electromagnetic wave.
VCC
=5V, IC=1mA, RL=100
tr tf
Response time
10
s
Forward voltage
Reverse current
Dark current
Peak sensitivity wavelength
Collector current
Collector-emitter saturation voltage
Response time
Input
charac-
teristics
Output
charac-
teristics
Transfer
characteristics
Photo
transistor
Infrared
light
emitter
diode
Collector
rank
Parameter
Symbol
IC
VCEO
PD
VR
IF
PC
VECO
Topr
Tstg
Limits
25 to +85
30 to +85
50
5
80
30
4.5
30
80
Unit
mA
V
mW
V
mA
mW
°C
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Input
(LED)
Output
photo-
transistor
(
)
1
0. 7
A
(4-0.3)
(4-0.35)
1.6
±0.1
(4-0.2)
3.3
±
0.1
(4-0.6)
3.6
±0.15
1.2
±0.15
(2-0.1)
(2-0.2)
(0.75)
0.75
±
0.1
C0.2
Optical center
Cross-section A-A
0.5
±
0.1
2.8
±
0.1
2.2
±
0.1
(0.15)
(2.75)
2-R0.3
0.15
2.6
±0.1
C0.4
0.3
1.5
±
0.3
0.4
0.5
(2)
Internal connection diagram
Collector
Anode
1.6
±0.1
2-0.35
Emitter
Cathode
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