參數(shù)資料
型號： RPI-0125
元件分類： 開關(guān)
英文描述： 1.2 mm SLOT WIDTH, 1 CHANNEL SLOTTED OPTICAL SWITCH TRANSISTOR OUTPUT
封裝： ULTRA SMALL, SMD, 4 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 73K
代理商： RPI-0125
RPI-0125
Photointerrupter, Ultraminiature SMD type
Applications
DSC(Digital steal camera)
DVC(Digital video camera)
Digital handy phone
Features
1) Ultra-small.
2) Gap 1.2mm.
Absolute maximum ratings (Ta
=25°C)
Electrical and optical characteristics (Ta
=25°C)
Electrical and optical characteristics curves
External dimensions (Unit : mm)
Notes:
1. Unspecified tolerance
shall be
±0.2 .
2. Dimension in parenthesis are
show for reference.
Cross-section A-A
Emitter
Collector
Optical axis center
Anode
Cathode
Recommended Pad Layout
Gap
A
(4-0.6)
(4-0.2)
3.3
(1.28)
(2.90)
1.2
±0.3
3.6
±0.3
1.6
1.0
C0.2
2.8
0.5
(2.35)
(1.60)
2-R0.3
(2-0.1)
2.2
(0.75)
(0.05)
(2-0.2)
(4-0.3)
(4-0.35)
2.5
1.5
(0.7)
(0.4)
2.6
0.3
C0.4
3.2
0.85
Delay time
Rise time (time for output current to rise from
10% to 90% of peak current)
Fall time (time for output current to fall from 90%
to 10% of peak current)
td
:
t r
:
t f
:
Fig.11 Response time measurement circuit
td
tr
tf
10%
90%
RL
VCC
Input
Output
Fig.1 Relative output current vs.
distance ( )
RELATIVE
COLLECTOR
CURRENT
:
I
C
(%)
DISTANCE : d
(mm)
0
1.0
2.0
0.5
1.5
2.5
3.0
100
125
50
75
25
0
d
Fig.4 Relative output current vs.
distance ( )
RELATIVE
COLLECTOR
CURRENT
:
I
C
(%)
DISTANCE : d
(mm)
0
1.0
2.0
0.5
1.5
100
125
50
75
25
0
d
Fig.2 Forward current falloff
20
0
20
40
60
80
100
10
50
40
30
20
0
AMBIENT TEMPERATURE : Ta (
°C)
FORWARD
CURRENT
:
I
F
(
mA
)
COLLECTOR
CURRENT
:
I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE: VCE
(V)
Fig.10 Output characteristics
48
610
2
0
2
1
3
4
5
6
7
IF=30mA
25mA
20mA
15mA
10mA
5mA
Fig.8 Response time vs.
collector current
COLLECTOR CURRENT : IC
(mA)
10
0.05 0.1
1
10
100
RESPONSE
TIME
:
t
r
(
s)
RL=100
RL=1k
RL=500
Fig.9 Dark current vs.
ambient temperature
AMBIENT TEMPERATURE : Ta
(
°C)
DARK
CURRENT
:
I
CEO
(nA)
0
25
50
75
100
25
0.1
1
10
100
1000
VCE
=20V
VCE
=10V
VCE
=30V
Fig.6 Relative output vs. ambient
temperature
RELATIVE
COLLECTOR
CURRENT
:
Ic
(
%
)
AMBIENT TEMPERATURE : Ta (
°C)
25
0
25
50
75
100
80
60
40
20
0
VCE
=5V
IF
=20mA
Fig.7 Collector current vs.
forward current
COLLECTOR
CURRENT
:
I
C
(mA)
FORWARD CURRENT : IF
(mA)
0
5
10
15
20
25
0
1
2
3
4
5
Fig.3 Forward current vs. forward
voltage
FORWARD
CURRENT
:
I
F
(mA)
FORWARD VOLTAGE : VF (
V)
0
10
20
30
40
50
0.4
0.2
0.6
0.8
1.0
1.2
1.4
1.6
1.8
75
°C
50
°C
25
°C
0
°C
25°C
Fig.5 Power dissipation / collector power
dissipation vs. ambient temperature
POWER
DISSIPATION
/
COLLECTOR
POWER
DISSIPTION
:
P
D
/P
C
(mW)
AMBIENT TEMPERATURE : Ta (
°C)
20
0
40
60
80
20
100
0
20
40
60
80
100
120
PD PC
Parameter
Cut-off frequency
Non-coherent Infrared light emitting diode used.
Peak light emitting wavelength
A
B
Rise time
Fall time
Symbol
VF
IR
ICEO
λP
IC
fC
IC
VCE(sat)
tr
tf
Min.
0.45
0.95
Typ.
1.3
800
10
Max.
1.6
10
0.5
4.95
2.33
4.95
0.4
Unit
VIF
=50mA
IF
=50mA
VR
=5V
VCE
=10V
VCE
=5V, IF=20mA
IF
=20mA, IC=0.1mA
VCC
=5V, IF=20mA, RL=100
VCE
=5V, IF=20mA
A
nm
mA
V
s
10
s
1
MHz
950
nm
Conditions
Maximum sensitivity wavelength
λP
800
nm
This product is not designed to be protected against electromagnetic wave.
VCC
=5V, IC=1mA, RL=100
tr tf
Response time
10
s
Forward voltage
Reverse current
Dark current
Peak sensitivity wavelength
Collector current
Collector-emitter saturation voltage
Response time
Input
charac-
teristics
Output
charac-
teristics
Transfer
characteristics
Photo
transistor
Infrared
light
emitter
diode
Collector
rank
Parameter
Symbol
IC
VCEO
PD
VR
IF
PC
VECO
Topr
Tstg
Limits
25 to +85
30 to +85
50
5
80
30
4.5
30
80
Unit
mA
V
mW
V
mA
mW
°C
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Input
(LED)
Output
photo-
transistor
(
)
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RPI-0125B 制造商:ROHM Semiconductor 功能描述:PHOTOINTERRUPTER TRANSMISSIVE 1.2MM PHOTOTRANSISTOR 4-PIN - Bulk 制造商:ROHM SEMICONDUCTOR 功能描述:ULTRAMINI PHOTOINTERRUPTER BULK 制造商:ROHM Semiconductor 功能描述:PHOTOINTERRUPTER ULTRAMINI SMD
RPI-0125B2DC 制造商:ROHM Semiconductor 功能描述:
RPI-0126 功能描述:光學(xué)開關(guān)（透射型，光電晶體管輸出） 50mA 5V 80mW Photointerrupter RoHS:否 制造商:Omron Electronics 輸出設(shè)備:Phototransistor 槽寬:3.4 mm 光圈寬度:0.5 mm 集電極—發(fā)射極最大電壓 VCEO:30 V 最大集電極電流:20 mA 正向電流: 安裝風(fēng)格:Through Hole 最大工作溫度:+ 85 C 最小工作溫度:- 25 C 封裝:
RPI-0126K 功能描述:SENSOR OPTO SLOT 1.2MM TRANS SMD RoHS:是 類別:傳感器，轉(zhuǎn)換器 >> 光學(xué) - 光斷續(xù)器 - 槽型 - 晶體管輸出 系列:- 產(chǎn)品變化通告:Internal Chip Change 04/May/2007 標(biāo)準(zhǔn)包裝:100 系列:- 檢測距離:0.063"（1.6mm） 檢測方法:可傳導(dǎo)的 輸出配置:光電晶體管 電流 - DC 正向(If):50mA 電流 - 集電極 (Ic)（最大）:20mA 電壓 - 集電極發(fā)射極擊穿（最大）:35V 響應(yīng)時間:35µs，35µs 安裝類型:通孔 封裝/外殼:PCB 安裝 包裝:管件 類型:無放大 工作溫度:-25°C ~ 85°C 其它名稱:425-1978-5
RPI-0128 功能描述:光學(xué)開關(guān)（透射型，光電晶體管輸出） Ultramin, SMD Type Photointerrupter RoHS:否 制造商:Omron Electronics 輸出設(shè)備:Phototransistor 槽寬:3.4 mm 光圈寬度:0.5 mm 集電極—發(fā)射極最大電壓 VCEO:30 V 最大集電極電流:20 mA 正向電流: 安裝風(fēng)格:Through Hole 最大工作溫度:+ 85 C 最小工作溫度:- 25 C 封裝:
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