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參數(shù)資料
| 型號(hào)： | RP110 |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 53K |
| 代理商： | RP110 |
RATING& CHARACTERISTIC CURVES FOR SERIES RP100- RP110
Data Sheet No. FSDP-103-2B
Tel.: (310) 767-1052
Fax: (310) 767-7958
DIOTEC ELECTRONICS CORP.
Gardena, CA 90248
U.S.A
18020 Hobart Blvd., Unit B
FIGURE 1. FORWARD CURRENT DERATING CURVE
Ambient Temperature, C
o
FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
Number of Cycles at 60 Hz
1
10
100
50
40
30
20
10
0
1 AMP FAST RECOVERY SILICON DIODES
4.97bfsdp103
H26
Single Phase, Half wave, 60 Hz
Resistive and Inductive Loads
FIGURE 3. TYPICAL FORWARD CHARACTERISTIC
Instantaneous Forward Voltage (Volts)
0.01
0.1
1.0
10
FIGURE 4. TYPICAL JUNCTION CAPACITANCE
Reverse Voltage, (Volts)
1
0.1
10
0.1
100
T = 25 C
Pulse Width= 300 S
1% Duty Cycle
J
o
JEDEC Method
8.3 mS Half Sine Wave
T = 150 C
J
o
T = 25 C
f=1 MHz
J
o
NOTES:
(1) Rise time= 7nS max., input impedance=1 Megohm, 22 pF
(2) Rise time= 10nS max., source impedance= 50 ohms
FIGURE 5. REVERSE RECOVERY TEST SETUP AND TIME CHARACTERISTIC
1
non-
inductive
10
noninductive
50
noninductive
OSCILLOSCOPE
(Note 1)
PULSE
GENERATOR
(Note 2)
(+)
(-)
D.U.T.
25 VDC
(APPROX)
-1.0
-0.5
0.0
0.5
Set time base
for 10nS/cm
1
cm
TRR
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