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參數(shù)資料
| 型號： | RP101N331D-TR-FE |
| 廠商： | RICOH COMPANY LTD |
| 元件分類： | 固定正電壓單路輸出LDO穩(wěn)壓器 |
| 英文描述： | 3.3 V FIXED POSITIVE LDO REGULATOR, 0.23 V DROPOUT, PDSO5 |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, SOT-23, 5 PIN |
| 文件頁數(shù)： | 19/23頁 |
| 文件大?。?/td> | 367K |
| 代理商： | RP101N331D-TR-FE |
RP101x
5
ELECTRICAL CHARACTERISTICS
RP101xxxxB/D
VIN
=Set VOUT+1V, IOUT=1mA, CIN=COUT=1μF, unless otherwise noted.
Topt
=25°C
Symbol
Item
Conditions
Min.
Typ.
Max.
Unit
VOUT > 2.0V
×0.994
×1.006
V
VOUT
Output Voltage
VOUT
≤ 2.0V
12
+12
mV
IOUT
Output Current
300
mA
ΔVOUT/
ΔIOUT
Load Regulation
1mA
≤ IOUT ≤ 150mA
20
40
mV
1.2V
≤ VOUT < 1.5V
0.40
0.50
1.5V
≤ VOUT < 1.7V
0.24
0.38
1.7V
≤ VOUT < 2.0V
0.21
0.34
2.0V
≤ VOUT < 2.5V
0.17
0.30
2.5V
≤ VOUT < 2.8V
0.14
0.25
VDIF
Dropout Voltage
IOUT
=150mA
2.8V
≤ VOUT ≤ 3.3V
0.13
0.23
V
ISS
Supply Current
IOUT
=0mA
18
25
μA
Istandby
Standby Current
VCE
=0V
0.1
2.0
μA
ΔVOUT/ΔVIN Line Regulation
Set VOUT
+0.5V ≤ VIN ≤ 5.0V
0.02
0.10
%/V
RR
Ripple Rejection
f
=1kHz, Ripple 0.2Vp-p
VIN
=Set VOUT+1V, IOUT=30mA
(In case that VOUT
≤ 2.0V, VIN=3.0V)
75
dB
VIN
Input Voltage*
1
1.7
5.25
V
ΔVOUT/
ΔTopt
Output Voltage
Temperature Coefficient
40°C ≤ Topt ≤ 85°C
±30
ppm
/
°C
ISC
Short Current Limit
VOUT
=0V
40
mA
IPD
CE Pull-down Current
0.3
μA
VCEH
CE Input Voltage "H"
1.1
V
VCEL
CE Input Voltage "L"
0.3
V
en
Output Noise
BW
=10Hz to 100kHz
IOUT
=30mA
30
μVrms
RLOW
Low Output Nch Tr. ON
Resistance (of D version)
VIN
=4.0V, VCE=0V
30
Ω
) The maximum Input Voltage of the ELECTRICAL CHARACTERISTICS is 5.25V. In case of exceeding this
specification, the IC must be operated on condition that the Input Voltage is up to 5.5V and the total operating
time is within 500hrs.
RECOMMENDED OPERATING CONDITIONS
(ELECTRICAL CHARACTERISTICS)
All of electronic equipment should be designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the
recommended operating conditions, even if when they are used over such conditions by momentary
electronic noise or surge. And the semiconductor devices may receive serious damage when they continue
to operate over the recommended operating conditions.
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