參數(shù)資料
型號: RN5VM111D
廠商: Ricoh Co., Ltd.
英文描述: High Speed CMOS Logic Quad D-Type Flip-Flops with 3-State Outputs 16-SO -55 to 125
中文描述: 鋰離子電池保護(hù)
文件頁數(shù): 18/25頁
文件大?。?/td> 180K
代理商: RN5VM111D
RN5VM1
××
C/D
14
D
OUT
V
DD
V
SS
V-
5
V
3
6
50μA
4
Test Circuit 7
V
DD
V
SS
V-
3
5
6
A
Test Circuit 8
C
OUT
C
3
C
1
R
1
Ct
V
DD
V
SS
V-
V
3
6
5
2
1
Test Circuit 9
D
OUT
V
DD
V
SS
V-
R
2
C
2
3
4
5
6
V
Test Circuit 10
The typical characteristics were obtained by use of these test circuits
Test Circuit 1 : Typical characteristics 1) 5) 9) 16)
Test Circuit 2 : Typical characteristics 2) 6)
Test Circuit 3 : Typical characteristics 3) 4) 7) 8) 18)
Test Circuit 4 : Typical characteristics 12)
Test Circuit 5 : Typical characteristics 13)
Test Circuit 6 : Typical characteristics 14)
Test Circuit 7 : Typical characteristics 15)
Test Circuit 8 : Typical characteristics 10) 11)
Test Circuit 9 : Typical characteristics 20)
Test Circuit 10: Typical characteristics 17) 19)
相關(guān)PDF資料
PDF描述
RN5VM112C High Speed CMOS Logic Quad D-Type Flip-Flops with 3-State Outputs 16-SO -55 to 125
RN5VM112C-TR High Speed CMOS Logic Quad D-Type Flip-Flops with 3-State Outputs 16-TSSOP -55 to 125
RN5VM112D High Speed CMOS Logic Quad D-Type Flip-Flops with 3-State Outputs 16-TSSOP -55 to 125
RN5VM112D-TR High Speed CMOS Logic Quad D-Type Flip-Flops with 3-State Outputs 16-TSSOP -55 to 125
RN73C2A115KBTG RESISTOR SMD 115K
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