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參數(shù)資料
| 型號： | RN47A5 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Transistor Silicon NPN PNP Epitaxial Type |
| 中文描述： | 東芝進步黨npn型晶體管硅外延式 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 94K |
| 代理商： | RN47A5 |
RN47A5
2002-01-30
3
Electrical Characteristics
(Ta 25°C) (Q1)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
I
CBO
V
CB
50 V, I
E
0
100
Collector cut-off current
I
CEO
V
CE
50 V, I
B
0
500
nA
Emitter cut-off current
I
EBO
V
EB
10 V, I
C
0
0.082
0.15
mA
DC current gain
h
FE
V
CE
5 V, I
C
10 mA
80
Collector-emitter saturation voltage
V
CE (sat)
I
C
5 mA, I
B
0.25 mA
0.1
0.3
V
Input voltage (ON)
V
I (ON)
V
CE
0.2 V, I
C
5 mA
1.5
5.0
V
Input voltage (OFF)
V
I (OFF)
V
CE
5 V, I
C
0.1 mA
1.0
1.5
V
Transition frequency
f
T
V
CE
10 V, I
C
5 mA
250
MHz
Collector output capacitance
C
ob
V
CB
10 V, I
E
0, f 1 MHz
3
6
pF
Input resistor
R1
32.9
47
61.1
k
Resistor ratio
R1/R2
0.8
1.0
1.2
Electrical Characteristics
(Ta 25°C) (Q2)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
I
CBO
V
CB
50 V, I
E
0
100
Collector cut-off current
I
CEO
V
CE
50 V, I
B
0
500
nA
Emitter cut-off current
I
EBO
V
EB
7 V, I
C
0
0.36
0.68
mA
DC current gain
h
FE
V
CE
5 V, I
C
10 mA
50
Collector-emitter saturation voltage
V
CE (sat)
I
C
5 mA, I
B
0.25 mA
0.1
0.3
V
Input voltage (ON)
V
I (ON)
V
CE
0.2 V, I
C
5 mA
0.7
2.5
V
Input voltage (OFF)
V
I (OFF)
V
CE
5 V, I
C
0.1 mA
0.3
1.1
V
Transition frequency
f
T
V
CE
10 V, I
C
5 mA
200
MHz
Collector output capacitance
C
ob
V
CB
10 V, I
E
0, f 1 MHz
3
6
pF
Input resistor
R1
3.29
4.7
6.11
k
Resistor ratio
R1/R2
0.47
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