- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄381069 > RN4607 (Toshiba Corporation) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) PDF資料下載
參數(shù)資料
| 型號： | RN4607 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) |
| 中文描述： | 東芝晶體硅外延式進步黨（厘進程）npn型硅外延型（厘進程） |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 161K |
| 代理商： | RN4607 |
RN4607
2001-06-05
3
Q1 Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
I
CBO
―
V
CB
=
50V, I
E
= 0
―
―
100
Collector cut-off current
I
CEO
―
V
CE
=
50V, I
B
= 0
―
―
500
nA
Emitter cut-off current
I
EBO
―
V
EB
=
6V, I
C
= 0
0.081
―
0.15
mA
DC current gain
h
FE
―
V
CE
=
5V, I
C
=
10mA
80
―
―
―
Collector-emitter saturation voltage
V
CE (sat)
―
I
C
=
5mA, I
B
=
0.25mA
―
0.1
0.3
V
Input voltage (ON)
V
I (ON)
―
V
CE
=
0.2V, I
C
=
5mA
0.7
―
1.8
V
Input voltage (OFF)
V
I (OFF)
―
V
CE
=
5V, I
C
=
0.1mA
0.5
―
0.8
V
Transition frequency
f
T
―
V
CE
=
10V, I
C
=
5mA
―
200
―
MHz
Collector output capacitance
C
ob
―
V
CB
=
10V, I
E
= 0
―
3
6
pF
Q2 Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
I
CBO
―
V
CB
= 50V, I
E
= 0
―
―
100
Collector cut-off current
I
CEO
―
V
CE
= 50V, I
B
= 0
―
―
500
nA
Emitter cut-off current
I
EBO
―
V
EB
= 6V, I
C
= 0
0.081
―
0.15
mA
DC current gain
h
FE
―
V
CE
= 5V, I
C
= 10mA
80
―
―
―
Collector-emitter saturation voltage
V
CE (sat)
―
I
C
= 5mA, I
B
= 0.25mA
―
0.1
0.3
V
Input voltage (ON)
V
I (ON)
―
V
CE
= 0.2V, I
C
= 5mA
0.7
―
1.8
V
Input voltage (OFF)
V
I (OFF)
―
V
CE
= 5V, I
C
= 0.1mA
0.5
―
0.8
V
Transition frequency
f
T
―
V
CE
= 10V, I
C
= 5mA
―
250
―
MHz
Collector output capacitance
C
ob
―
V
CB
= 10V, I
E
= 0, f = 1 MHz
―
3
6
pF
Q1, Q2 Common Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Input resistor
R1
―
―
7
10
13
k
Resistor ratio
R1/R2
―
―
0.191
0.213
0.232
―
相關PDF資料 |
PDF描述 |
|---|---|
| RN47A4 | TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type |
| RN47A5 | TOSHIBA Transistor Silicon NPN PNP Epitaxial Type |
| RN4901 | Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) |
| RN4901FE | TOSHIBA Transistor Silicon PNP - NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) |
| RN4902 | Silicon NPN Epitaxial Type (PCT Process) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| RN4608 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TSOP |
| RN4608(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:TRAN DUAL PNP/NPN SM6 -50V -100A |
| RN4609 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) |
| RN4610 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS |
| RN4611 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) |
發(fā)布緊急采購，3分鐘左右您將得到回復。