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參數(shù)資料
| 型號： | RN4606 |
| 廠商： | Toshiba Corporation |
| 英文描述： | Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) |
| 中文描述： | 硅外延式進步黨（厘進程）npn型硅外延型（厘進程） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 159K |
| 代理商： | RN4606 |
RN4606
2001-02-08 2/4
Q1, Q2 Common Maximum Ratings
(Ta = 25 C)
Characteristic
Symbol
Rating
Unit
Collector power dissipation
P
C
*
300
mW
Junction temperature
T
j
150
C
Storage temperature range
T
stg
55~150
C
*
Total rating
Marking
Equivalent Circuit
(Top View)
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
The information contained herein is subject to change without notice.
000707EAA2
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|---|---|
| RN4607 | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) |
| RN47A4 | TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type |
| RN47A5 | TOSHIBA Transistor Silicon NPN PNP Epitaxial Type |
| RN4901 | Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RN4606(TE85L,F) | 制造商:Toshiba 功能描述:NPN|PNP 50V 100mA |
| RN4606_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) |
| RN4607 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) |
| RN4608 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TSOP |
| RN4608(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:TRAN DUAL PNP/NPN SM6 -50V -100A |
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