- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄381068 > RN4605 (Toshiba Corporation) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) PDF資料下載
參數(shù)資料
| 型號： | RN4605 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) |
| 中文描述： | 東芝晶體硅外延式進步黨（厘進程）npn型硅外延型（厘進程） |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 163K |
| 代理商： | RN4605 |
RN4605
2001-06-05
3
Q1 Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
I
CBO
―
V
CB
=
50V, I
E
= 0
―
―
100
Collector cut-off current
I
CEO
―
V
CE
=
50V, I
B
= 0
―
―
500
nA
Emitter cut-off current
I
EBO
―
V
EB
=
5V, I
C
= 0
0.078
―
0.145
mA
DC current gain
h
FE
―
V
CE
=
5V, I
C
=
10mA
80
―
―
―
Collector-emitter saturation voltage
V
CE (sat)
―
I
C
=
5mA, I
B
=
0.25mA
―
0.1
0.3
V
Input voltage (ON)
V
I (ON)
―
V
CE
=
0.2V, I
C
=
5mA
0.6
―
1.1
V
Input voltage (OFF)
V
I (OFF)
―
V
CE
=
5V, I
C
=
0.1mA
0.5
―
0.8
V
Transition frequency
f
T
―
V
CE
=
10V, I
C
=
5mA
―
200
―
MHz
Collector output capacitance
C
ob
―
V
CB
=
10V, I
E
= 0
―
3
6
pF
Q2 Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
I
CBO
―
V
CB
= 50V, I
E
= 0
―
―
100
Collector cut-off current
I
CEO
―
V
CE
= 50V, I
B
= 0
―
―
500
nA
Emitter cut-off current
I
EBO
―
V
EB
= 5V, I
C
= 0
0.078
―
0.145
mA
DC current gain
h
FE
―
V
CE
= 5V, I
C
= 10mA
80
―
―
―
Collector-emitter saturation voltage
V
CE (sat)
―
I
C
= 5mA, I
B
= 0.25mA
―
0.1
0.3
V
Input voltage (ON)
V
I (ON)
―
V
CE
= 0.2V, I
C
= 5mA
0.6
―
1.1
V
Input voltage (OFF)
V
I (OFF)
―
V
CE
= 5V, I
C
= 0.1mA
0.5
―
0.8
V
Transition frequency
f
T
―
V
CE
= 10V, I
C
= 5mA
―
250
―
MHz
Collector output capacitance
C
ob
―
V
CB
= 10V, I
E
= 0, f = 1 MHz
―
3
6
pF
Q1, Q2 Common Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Input resistor
R1
―
―
1.54
2.2
2.86
k
Resistor ratio
R1/R2
―
―
0.0421 0.0468 0.0515
―
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RN4606 | Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) |
| RN4607 | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) |
| RN47A4 | TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type |
| RN47A5 | TOSHIBA Transistor Silicon NPN PNP Epitaxial Type |
| RN4901 | Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RN4605(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:TRAN DUAL PNP/NPN SM6 -50V -100A 制造商:Toshiba America Electronic Components 功能描述:Transistors NPN/PNP 50V 0.1A 2.2/47k SM6 |
| RN4606 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) |
| RN4606(TE85L,F) | 制造商:Toshiba 功能描述:NPN|PNP 50V 100mA |
| RN4606_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) |
| RN4607 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。