參數(shù)資料
型號(hào)： RN2907
廠商： Toshiba Corporation
英文描述： TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
中文描述： 東芝晶體硅外延式進(jìn)步黨（厘進(jìn)程）
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 188K
代理商： RN2907
RN2907~RN2909
2001-02-08 2/5
Maximum Ratings
(Ta = 25 C) (Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
RN2907~2909
V
CEO
50
V
RN2907
6
RN2908
7
Emitter-base voltage
RN2909
V
EBO
15
V
Collector current
I
C
100
mA
Collector power dissipation
P
C
*
200
mW
Junction temperature
T
j
150
C
Storage temperature range
RN2907~2909
T
stg
55~150
C
* :
Total rating
Electrical Characteristics
(Ta = 25 C) (Q1, Q2 Common)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
I
CBO
―
V
CB
=
50V, I
E
= 0
―
―
100
nA
Collector cut-off
current
RN2907~2909
I
CEO
―
V
CE
=
50V, I
B
= 0
―
―
500
nA
RN2907
―
V
EB
=
6V, I
C
= 0
0.081
―
0.15
RN2908
―
V
EB
=
7V, I
C
= 0
0.078
―
0.145
Emitter cut-off
current
RN2909
I
EBO
―
V
EB
=
15V, I
C
= 0
0.167
―
0.311
mA
RN2907
―
80
―
―
RN2908
―
80
―
―
DC current gain
RN2909
h
FE
―
V
CE
=
5V, I
C
=
10mA
70
―
―
―
Collector-emitter
saturation voltage
RN2907~2909
V
CE (sat)
―
I
C
=
5mA, I
B
=
0.25mA
―
0.1
0.3
V
RN2907
―
0.7
―
1.8
RN2908
―
1.0
―
2.6
Input voltage (ON)
RN2909
V
I (ON)
―
V
CE
=
0.2V, I
C
=
5mA
2.2
―
5.8
V
RN2907
―
0.5
―
1.0
RN2908
―
0.6
―
1.16
Input voltage (OFF)
RN2909
V
I (OFF)
―
V
CE
=
5V, I
C
=
0.1mA
1.5
―
2.6
V
Translation
frequency
RN2907~2909
f
T
―
V
CE
=
10V, I
C
=
5mA
―
200
―
MHz
Collector output
capacitance
RN2907~2909
C
ob
―
V
CB
=
10V, I
E
= 0,
f = 1MHz
―
3
6
pF
RN2907
―
7
10
13
RN2908
―
15.4
22
28.6
Input resistor
RN2909
R1
―
―
32.9
47
61.1
k
RN2907
―
0.191
0.213
0.232
RN2908
―
0.421
0.468
0.515
Resistor ratio
RN2909
R1/R2
―
―
1.92
2.14
2.35
―
相關(guān)PDF資料
PDF描述
RN2907FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2908 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2908FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2909 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2909FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RN2907_07 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon PNP Epitaxial Type (PCT Process)Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN2907AFS 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2907FE 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2907FS 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2908 制造商:Toshiba America Electronic Components 功能描述:
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*