參數(shù)資料
型號(hào): RN2609
廠商: Toshiba Corporation
英文描述: TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
中文描述: 東芝晶體硅外延式進(jìn)步黨(厘進(jìn)程)
文件頁數(shù): 1/6頁
文件大小: 191K
代理商: RN2609
RN2607~RN2609
2001-06-05
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2607,RN2608,RN2609
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Including two devices in SM6 (super mini type with 6 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1607~RN1609
Equivalent Circuit andBias Resistor Values
Eauivalent Circuit
(Top View)
Maximum Ratings
(Ta = 25 C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
RN2607~RN2609
V
CEO
50
V
RN2607
6
RN2608
7
Emitter-base voltage
RN2609
V
EBO
15
V
Collector current
I
C
100
mA
Collector power dissipation
P
C
*
300
mW
Junction temperature
T
j
150
C
Storage temperature range
T
stg
55~150
C
*
Total rating
JEDEC
EIAJ
TOSHIBA
Weight: 0.015g
2-3N1A
Unit in mm
Type No.
R1 (k
)
R2 (k
)
RN2607
10
47
RN2608
22
47
RN2609
47
22
相關(guān)PDF資料
PDF描述
RN2702 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
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RN2706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
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