參數(shù)資料
型號(hào): RN2410
廠商: Toshiba Corporation
英文描述: TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
中文描述: 東芝晶體硅外延式進(jìn)步黨(厘進(jìn)程)
文件頁數(shù): 1/5頁
文件大小: 166K
代理商: RN2410
RN2410,RN2411
2001-06-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2410,RN2411
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1410, RN1411
Equivalent Circuit
Maximum Ratings
(Ta = 25 C)
Characterisstic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
100
mA
Collector power dissipation
P
C
200
mW
Junction temperature
T
j
150
C
Storage temperature range
T
stg
55~150
C
Electrical Characteristics
(Ta
=
25 C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
=
50V, I
E
= 0
100
nA
Emitter cut-off current
I
EBO
V
EB
=
5V, I
C
= 0
100
nA
DC current gain
h
FE
V
CE
=
5V, I
C
=
1mA
120
400
Collector-emitter saturation voltage
V
CE (sat)
I
C
=
5mA, I
B
=
0.25mA
0.1
0.3
V
Translation frequency
f
T
V
CE
=
10V, I
C
=
5mA
200
MHz
Collector output capacitance
C
ob
V
CB
=
10V, I
E
= 0, f = 1MHz
3
6
pF
RN2410
3.29
4.7
6.11
Input resistor
RN2411
R1
7
10
13
k
JEDEC
EIAJ
TOSHIBA
Weight: 0.012g
TO-236MOD
SC-59
2-3F1A
Unit: mm
相關(guān)PDF資料
PDF描述
RN2411 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2416 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN2417 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN2418 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN2414 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
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