參數(shù)資料
型號(hào): RN1441
廠商: Toshiba Corporation
英文描述: TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
中文描述: 東芝npn型晶體管硅外延型(厘進(jìn)程)
文件頁數(shù): 2/9頁
文件大?。?/td> 396K
代理商: RN1441
RN1441 RN1444
2001-06-07
2
Electrical Characteristics
(Ta = 25 C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
= 50V, I
E
= 0
0.1
μA
Emitter cut-off current
I
EBO
V
EB
= 25V, I
C
= 0
0.1
μA
DC current gain
h
FE (Note)
V
CE
= 2V, I
C
= 4mA
200
1200
Collector-emitter saturation voltage
V
CE (sat)
I
C
= 30mA, I
B
= 3mA
0.1
V
Transition frequency
f
T
V
CE
= 6V, I
C
= 4mA
30
MHz
Collector output capacitance
C
ob
V
CB
= 10V, I
E
= 0, f = 1MHz
4.8
pF
RN1441
3.9
5.6
7.3
RN1442
7
10
13
RN1443
15.4
22
28.6
Input resistor
RN1444
R1
1.54
2.2
2.86
k
Note : h
FE
classification
A: 200 700
B: 350 1200
相關(guān)PDF資料
PDF描述
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