參數(shù)資料
型號： RN1412
廠商： Toshiba Corporation
英文描述： Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
中文描述： 開關(guān)，逆變電路，接口電路及驅(qū)動電路應(yīng)用
文件頁數(shù)： 1/5頁
文件大?。?/td> 168K
代理商： RN1412
RN1412,RN1413
2001-06-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1412,RN1413
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2412, RN2413
Equivalent Circuit
Maximum Ratings
(Ta = 25 C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
100
mA
Collector power dissipation
P
C
200
mW
Junction temperature
T
j
150
C
Storage temperature range
T
stg
55~125
C
Electrical Characteristics
(Ta = 25 C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
―
V
CB
= 50V, I
E
= 0
―
―
100
nA
Emitter cut-off current
I
EBO
―
V
EB
= 5V, I
C
= 0
―
―
100
nA
DC current gain
h
FE (note)
―
V
CE
= 5V, I
C
= 1mA
120
―
700
Collector-emitter saturation voltage
V
CE (sat)
―
I
C
= 5mA, I
B
= 0.25mA
―
0.1
0.3
V
Transition frequency
f
T
―
V
CE
= 10V, I
C
= 5mA
―
250
―
MHz
Collector output capacitance
C
ob
―
V
CB
= 10V, I
E
= 0, f = 1MHz
―
3
6
pF
RN1412
15.4
22
28.6
Input resistor
RN1413
R1
―
―
32.9
47
61.1
k
JEDEC
EIAJ
TOSHIBA
Weight: 0.012g
TO-236MOD
SC-59
2-3F1A
Unit: mm
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參數(shù)描述
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