參數(shù)資料
型號: RN1108
廠商: Toshiba Corporation
英文描述: Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
中文描述: 開關(guān),逆變電路,接口電路及驅(qū)動電路應(yīng)用
文件頁數(shù): 1/6頁
文件大?。?/td> 175K
代理商: RN1108
RN1107~1109
2001-06-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1107,RN1108,RN1109
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
With built-in bias resistors.
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2107~2109
Equivalent Circuit and Bias Resistor Values
Maximum Ratings
(Ta = 25 C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
RN1107~1109
V
CBO
50
V
Collector-emitter voltage
RN1107~1109
V
CEO
50
V
RN1107
6
RN1108
7
Emitter-base voltage
RN1109
V
EBO
15
V
Collector current
RN1107~1109
I
c
100
mA
Collector power dissipation
RN1107~1109
P
c
100
mW
Junction temperature
RN1107~1109
T
j
150
C
Storage temperature range
RN1107~1109
T
stg
55~150
C
JEDEC
EIAJ
TOSHIBA
Weight: 2.4mg
2-2H1A
Unit: mm
Type No.
R1 (k
)
R2 (k
)
RN1107
10
47
RN1108
22
47
RN1109
47
22
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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