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參數(shù)資料
| 型號(hào)： | RMWP26001 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 衰減器 |
| 英文描述： | 24-26.5 GHz Power Amplifier MMIC |
| 中文描述： | 24000 MHz - 26500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 2.85 X1.20 MM, DIE |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 385K |
| 代理商： | RMWP26001 |
2004 Fairchild Semiconductor Corporation
RMWP26001 Rev. C
R
L
MMIC CHIP
100pF
100pF
L
L
L
100pF
100pF
10,000pF
L
L
L
L
L
100pF
10
μ
F
L
DRAIN SUPPLY
Vd = +4V
L = BOND WIRE INDUCTANCE
GROUND
(Back of Chip)
GATE SUPPLY
Vg
RF IN
RF OUT
Figure 3. Recommended Application Schematic Circuit Diagram
Figure 4. Recommended Assembly Diagram
Note:
Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief.
RF INPUT
RF OUTPUT
L < 0.015"
(4 Places)
Vg (NEGATIVE)
Vdd (POSITIVE)
DIE-ATTACH
80Au/20Sn
2 MIL GAP
5 MIL THICK
ALUMINA
50
5 MIL THICK
ALUMINA
50
10
μ
F
100pF
100pF
100pF
100pF
100pF
10,000pF
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