- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374600 > RMWP23001 (FAIRCHILD SEMICONDUCTOR CORP) 21-24 GHz Power Amplifier MMIC PDF資料下載
參數(shù)資料
| 型號： | RMWP23001 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 衰減器 |
| 英文描述： | 21-24 GHz Power Amplifier MMIC |
| 中文描述： | 21000 MHz - 24000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 2.60 X 1.20 MM, DIE |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 296K |
| 代理商： | RMWP23001 |
2004 Fairchild Semiconductor Corporation
RMWP23001 Rev. C
R
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with
gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT
devices. Note that the backside of the chip is gold plated and is used as RF and DC ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of
bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of
wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges
through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for
appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typical 2 mil gap
between the chip and the substrate material.
Figure 1. Functional Block Diagram
Figure 2. Chip Layout and Bond Pad Locations
(Chip Size is 2.6mm x 1.2mm x 100μm. Back of chip is RF and DC Ground)
Note:
1. Typical range of gate voltage is -0.7 to -0.05V to set Idq of 400mA.
DRAIN
SUPPLY
Vd1
DRAIN
SUPPLY
Vd3
DRAIN
SUPPLY
Vd4
DRAIN
SUPPLY
Vd2
MMIC CHIP
RF OUT
RF IN
GROUND
(Back of the Chip)
GATE SUPPLY
Vg
Dimensions in mm
0.0
0.0
0.0
0.0
2.6
2.6
1.2
1.2
0.55
0.82
1.072
1.756
2.076
0.791
0.637
0.482
0.685
0.53
0.376
相關PDF資料 |
PDF描述 |
|---|---|
| RMWP26001 | 24-26.5 GHz Power Amplifier MMIC |
| RMWT11001 | 11-33 GHz Tripler MMIC |
| RO2164A | 868.35 MHz SAW Resonator |
| RO2164A-1 | 868.35 MHz SAW Resonator |
| RO2164A-2 | 868.35 MHz SAW Resonator |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| RMWP26001 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:24-26.5 GHz Power Amplifier MMIC |
| RMWT04001 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
| RMWT11001 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:11-33 GHz Tripler MMIC |
| RMX | 制造商:TAITRON 制造商全稱:TAITRON Components Incorporated 功能描述:Metal Oxide Resistor Normal & Miniature Style |
| RM-X | 制造商:Omron Electronic Components LLC 功能描述:MODULE,COMPACT SAFETY RELAY MODULE, 22.5 MM DIN ENCLOSURE |
發(fā)布緊急采購，3分鐘左右您將得到回復。