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參數(shù)資料
| 型號： | RMWB24001 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 衰減器 |
| 英文描述： | 24 GHz Buffer Amplifier MMIC |
| 中文描述： | 17000 MHz - 24000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 2.50 X 1.50 MM, 0.10 MM HEIGHT, DIE |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 98K |
| 代理商： | RMWB24001 |
2004 Fairchild Semiconductor Corporation
RMWB24001 Rev. D
R
RMWB24001 24 GHz BA, Pout vs Pin Performance
On-Wafer Measurements, Vd = 4 V, Idq = 70 mA
20
0
18
16
14
12
10
8
6
4
2
O
Input Power (dBm)
-14
-12
-10
-8
-6
-4
-2
0
2
4
6
8
-16
10
17 GHz
21 GHz
24 GHz
Recommended Procedure for Biasing and Operation
CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE
DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to
properly test the amplifier:
Step 1:
Turn off RF input power.
Step 2:
the chip carrier. Slowly apply negative gate bias supply
voltage of -1.5V to Vg.
Connect the DC supply grounds to the ground of
Step 3:
+4V to Vd.
Slowly apply positive drain bias supply voltage of
Step 4:
current of Idq = 70mA.
Adjust gate bias voltage to set the quiescent
Step 5:
signal may now be applied at the appropriate frequency
band.
After the bias condition is established, the RF input
Step 6:
Follow turn-off sequence of:
(i) Turn off RF input power,
(ii) Turn down and off drain voltage (Vd),
(iii) Turn down and off gate bias voltage (Vg).
Typical Characteristics
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| RMWB33001 | 33 GHz Buffer Amplifier MMIC |
| RMWP23001 | 21-24 GHz Power Amplifier MMIC |
| RMWP26001 | 24-26.5 GHz Power Amplifier MMIC |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RMWB33001 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:33 GHz Buffer Amplifier MMIC |
| RMWL38001 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:37-40 GHz Low Noise Amplifier MMIC |
| RMWP23001 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:21-24 GHz Power Amplifier MMIC |
| RMWP26001 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:24-26.5 GHz Power Amplifier MMIC |
| RMWT04001 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
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