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參數(shù)資料
| 型號(hào)： | RMPA1951-102 |
| 廠商： | Raytheon Company |
| 英文描述： | 3V PCS CDMA Power Amplifier Module |
| 中文描述： | 3V的個(gè)人通訊CDMA功放模塊 |
| 文件頁(yè)數(shù)： | 1/17頁(yè) |
| 文件大?。?/td> | 200K |
| 代理商： | RMPA1951-102 |
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Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised August 27, 2001
Page 1
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
Description
Advanced DC power-management extends average phone-battery life!
Single positive-supply operation and power-down mode.
35% power-added efficiency at +29 dBm CDMA average output power.
Compact LCC package: 6.0 x 6.0 x 1.5 mm
3
.
50 ohm matched and DC blocked input/output.
Features
The RMPA1951-102 is a small-outline, power amplifier module (PAM) for CDMA Personal Communication System
(PCS) and Wireless Local Loop (WLL) applications.
Advanced DC power management provides an effective
means to reduce current consumption during peak phone usage at backed-off RF power levels
.
Analog or digital
bias control enables the handset designer to optimize gain, linearity and power-added efficiency over a wide range
of output powers, depending on the power-density profile of the wireless network. High power-added efficiency and
excellent linearity are achieved using Raytheon’s Heterojunction Bipolar Transistor (HBT) process.
Electrical
Characteristics
3
Parameter
Operating Frequency
Gain
(Po=0 dBm)
(Po=28 dBm)
Linear Output Power
Power-Added Efficiency
(Po=16 dBm)
(Po=28 dBm)
(Po=29 dBm)
ACPR (Offset
≥
1.25 MHz)
4
Noise Figure
Noise Power (Po
≤
29 dBm)
Input VSWR (50
)
Output VSWR (50
)
Min
1850
Typ
Max
1910
Unit
MHz
20
25
29
24
27
dB
dB
dBm
5
6.5
32
35
-49
5
%
%
%
dBc
dB
28
31
-46
6
-135 dBm/Hz
2.5:1
2.0:1
3.5:1
Parameter
Stability (All spurious)
5
Harmonics (Po
≤
29 dBm)
2fo, 3fo, 4fo
Quiescent Current
(Vref=2.7V)
(Vref=2.0V)
(Vref=1.7V)
Power Shutdown Current
6
Vcc
Vref
Iref
Case Operating
Temperature
Min
Typ
Max
-70
Unit
dBc
-30
dBc
80
50
35
2
3.5
2.7
13
100
mA
mA
mA
uA
V
V
mA
10
4.5
3.2
3.0
1.7
-30
+85
°C
Notes:
1. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
2. Typical RF input power for CDMA Pout = +28 dBm.
3. All parameters met at Tc =+25°C, Vcc =+3.5V, Vref=+2.7V, f=1880 MHz and load VSWR
≤
1.2:1.
4. Po
≤
28 dBm at Vcc=3.5V; CDMA Waveform measured using the ratio of average power within a
1.23 MHz channel to average power within a 30 kHz bandwidth at + 1.25 MHz offset.
5. Load VSWR
≤
6:1, all phase angles.
6. No applied RF signal. Vcc=+3.5V nominal, Vref=+0.2V maximum.
Absolute
Maximum
Ratings
1
Parameter
Supply Voltage
Reference Voltage
RF Input Power
2
Load VSWR
Case Operating Temperature
Storage Temperature
Symbol
Vcc
Vref
P
in
V
SWR
T
c
T
stg
Min
Typical
3.5
2.7
+1
1.2:1
+25
+25
Max
6
4.0
+7
10:1
+110
+150
Units
V
V
dBm
1.5
-40
-55
°
C
°
C
RMPA1951-102
3V PCS CDMA Power
Amplifier Module
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