參數(shù)資料
型號： RMPA0959
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 衰減器
英文描述： CDMA and CDMA2000-1X PowerEdge Power Amplifier Module
中文描述： 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
封裝： 4 X 4 MM, 1.50 MM HEIGHT, ROHS COMPLIANT, LEADLESS PACKAGE-11
文件頁數(shù)： 2/13頁
文件大?。?/td> 523K
代理商： RMPA0959
2004 Fairchild Semiconductor Corporation
RMPA0959 Rev. D
R
Absolute Ratings
1
Notes:
1:
No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.
Electrical Characteristics
1
Notes:
1. All parameters met at Tc = +25°C, Vcc = +3.4V, Vref = 2.85V and load VSWR
2. All phase angles.
3. Guaranteed by design.
≤
1.2:1, unless otherwise noted.
Symbol
Vcc1, Vcc2
Vref
Vmode
Pin
Tstg
Parameter
Ratings
5.0
2.6 to 3.5
3.5
+10
-55 to +150
Units
V
V
V
dBm
°C
Supply Voltages
Reference Voltage
Power Control Voltage
RF Input Power
Storage Temperature
Symbol Parameter
f
Operating Frequency
CDMA Operation
SSg
Small-Signal Gain
Gp
Power Gain
Min
824
Typ
Max
849
Units
MHz
Comments
25
26
26.5
29
25
dB
dB
dB
dBm
dBm
%
%
%
mA
mA
Po = 0 dBm
Po = +28 dBm; Vmode = 0V
Po = +16 dBm; Vmode
Vmode = 0V
Vmode
≥
2.0V
Vmode = 0V
Vmode
≥
2.0V
Vmode
≥
2.0V, Vcc = 1.4 V
Po = +28 dBm, Vmode = 0V
Po = +16 dBm, Vmode = 2.0V
IS-95 A/B Modulation
Po = +28 dBm; Vmode = 0V
Po = +16 dBm; Vmode
Po = +28 dBm; Vmode = 0V
Po = +16 dBm; Vmode
≥
2.0V
Po
Linear Output Power
28
16
PAEd
PAE (digital) @ +28 dBm
PAE (digital) @ +16 dBm
PAEd (digital) @ +16 dBm
High Power Total Current
Low Power Total Current
Adjacent Channel Power Ratio
ACPR1 ±885 KHz Offset
39
8.5
20
475
130
Itot
-55
-57
-60
-70
dBc
dBc
dBc
dBc
≥
2.0V
ACPR2 ±1.98 MHz Offset
≥
2.0V
AMPS Operation
Gp
PAEa
General Characteristics
VSWR
Input Impedance
NF
Noise Figure
Rx No
Receive Band Noise Power
2fo-5fo
Harmonic Suppression
S
Spurious Outputs
Ruggedness w/ Load Mismatch
Tc
Case Operating Temperature
DC Characteristics
Iccq
Quiescent Current
Iref
Reference Current
Icc(off)
Shutdown Leakage Current
Power Gain
Power-Added Efficiency (analog)
26
27.5
53
Po = +31 dBm
Po = +31 dBm
%
2.0:1 2.5:1
4
-134
dB
dBm/Hz Po
dBc
dBc
≤
≤
+28 dBm; 869 to 894 MHz
+28 dBm
Load VSWR
≤
5.0:1
No permanent damage.
3
-30
-60
10:1
85
Po
2,3
3
-30
°C
62
5
<1
mA
mA
uA
Vmode
Po
≤
No applied RF signal.
≥
2.0V
8
5
+28 dBm
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參數(shù)描述
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