參數(shù)資料
型號: RMBA09501A
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 衰減器
英文描述: Cellular 2 Watt Linear GaAs MMIC Power Amplifier
中文描述: 869 MHz - 894 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封裝: PLASTIC, SMD, 12 PIN
文件頁數(shù): 1/7頁
文件大小: 89K
代理商: RMBA09501A
2003 Fairchild Semiconductor Corporation
May 2004
RMBA09501A Rev. C
R
RMBA09501A
Cellular 2 Watt Linear GaAs MMIC Power Amplifier
General Description
The RMBA09501A is a high power, highly linear Power
Amplifier. The two stage circuit uses our advanced 0.25μm
pHEMT process. It is designed for use as a driver stage for
Cellular base stations, or as the output stage for Micro- and
Pico-Cell base stations. The amplifier has been optimized
for high linearity requirements for CDMA operation.
Features
2 Watt Linear output power at 36dBc ACPR1 for CDMA
operation
OIP3
43dBc at 27 and 30dBm power output
Small Signal Gain of > 30dB
Small outline SMD package
Absolute Ratings
Note:
1. Only under quiescent conditions—no RF applied.
Symbol
Parameter
1
Value
+10
-5
+5
-30 to +85
-40 to +100
Units
V
V
dBm
°C
°C
V
V
Pin
T
C
T
STG
DD
Drain Supply Voltage
Gate Supply Voltage
RF Input Power (from 50
Case Operating Temperature
Storage Temperature Range
GS
source)
Device
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