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參數(shù)資料
| 型號： | RM50HG-12S |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH SPEED SWITCHING USE NON-INSULATED TYPE |
| 中文描述： | 高速開關(guān)使用非絕緣型 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 25K |
| 代理商： | RM50HG-12S |
Sep.1998
Absolute Maximum Ratings, T
j
= 25
°
C unless otherwise specified
Ratings
Symbol
RM50HG-12S
Units
Peak Reverse Blocking Voltage (Repetitive)
V
RRM
V
RSM
V
R(DC)
I
F(DC)
I
FSM
T
stg
T
j
—
600
Volts
Peak Reverse Blocking Voltage (Non-Repetitive)
720
Volts
DC Reverse Blocking Voltage
480
Volts
DC Current, T
C
= 80
°
C (Resistive Load)
Peak Half-Cycle Surge (Non-Repetitive) On-State Current (60Hz)
50
Amperes
1000
Amperes
Storage Temperature
-40 to +125
°
C
°
C
Operating Temperature
-40 to +150
Maximum Mounting Torque M3 Mounting Screw
0.59 ~ 0.98
N · m
Module Weight (Typical)
—
10
Grams
Electrical and Thermal Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Max.
Units
Blocking State Maximums
Reverse Leakage Current, Peak
I
RRM
V
RRM applied,
T
j
= 25
°
C
V
RRM applied,
T
j
= 125
°
C
0.1
mA
1.0
mA
Conducting State Maximums
Forward Voltage Drop
V
FM
T
j
= 25
°
C, I
FM
= 200A
4.0
Volts
Switching Minimums
Reverse Recovery Time
t
rr
I
FM
= 200A, T
j
= 150
°
C
di/dt = -1000A/
μ
s, V
R
= 300V
0.2
μ
s
Lead Integrity
—
Tension Load: 2.5 kg
30.0
s
—
Bending Load: 1 kg bent to 90
°
2.0
times
Thermal Maximums
Junction to Case Thermal Resistance
R
th(j-c)
R
th(c-f)
Junction to case
0.5
°
C/Watt
°
C/Watt
Contact Thermal Resistance
*Maximum ratings unless otherwise specified
Case to Fin, Thermal Grease Applied
0.5
MITSUBISHI FAST RECOVERY DIODE MODULES
RM50HG-12S
HIGH SPEED SWITCHING USE
NON-INSULATED TYPE
FORWARD VOLTAGE DROP, V
F
,
(VOLTS)
F
F
,
MAXIMUM FORWARD CHARACTERISTIC
1.0
2.0
3.0
4.0
5.0
6.0
10
1
10
2
10
3
T
j
= 25
o
C
TIME
(S)
MAXIMUM TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (JUNCTION TO CASE)
10
0
10
1
10
-3
10
-2
10
0
10
-1
T
t
,
0
0.1
0.2
0.3
0.4
0.5
CYCLES
(60Hz)
RATEFORWARD CURRENT
10
0
10
1
10
2
S
0
200
400
600
800
1000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RM50HG-12S | Super Fast Recovery Single Diode (50 Amperes/600 Volts) |
| RM50TC-24 | MEDIUM POWER GENERAL USE INSULATED TYPE |
| RM50TC-2H | MEDIUM POWER GENERAL USE INSULATED TYPE |
| RM50TC-H | MEDIUM POWER GENERAL USE INSULATED TYPE |
| RM50TC-M | MEDIUM POWER GENERAL USE INSULATED TYPE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RM50HG-12S_01 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE NON-INSULATED TYPE |
| RM50HG-12S_09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH SPEED SWITCHING USE NON-INSULATED TYPE |
| RM50TC-24 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER GENERAL USE INSULATED TYPE |
| RM50TC-2H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER GENERAL USE INSULATED TYPE |
| RM50TC-H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER GENERAL USE INSULATED TYPE |
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