參數資料
型號: RM50HA-XXF
廠商: Mitsubishi Electric Corporation
英文描述: HIGH SPEED SWITCHING USE INSULATED TYPE
中文描述: 高速開關使用絕緣型
文件頁數: 2/3頁
文件大?。?/td> 47K
代理商: RM50HA-XXF
Feb.1999
ABSOLUTE MAXIMUM RATINGS
(T
j
=25
°
C)
Unit
V
V
V
MITSUBISHI FAST RECOVERY DIODE MODULES
RM50HA-XXF
HIGH SPEED SWITCHING USE
INSULATED TYPE
12
600
720
480
Symbol
V
RRM
V
DRM
V
R (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Reverse DC voltage
Unit
A
A
A
2
s
°
C
°
C
V
N·m
kg·cm
N·m
kg·cm
g
Conditions
Resistive load, T
C
=105
°
C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
Charged part to case
Main terminal screw M4
Mounting screw M5
Typical value
Ratings
50
1000
4.2x10
3
–40~150
–40~125
2500
0.98~1.47
10~15
1.47~1.96
15~20
90
Symbol
I
DC
I
FSM
I
2t
T
j
T
stg
V
iso
Parameter
DC output current
Surge (non-repetitive) forward current
I
2t
for fusing
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Voltage class
20
1000
1100
800
24
1200
1350
960
Unit
mA
V
μ
s
μ
C
°
C/W
°
C/W
Limits
Symbol
I
RRM
V
FM
t
rr
Q
rr
R
th (j-c)
R
th (c-f)
*
1
12 class: V
R
=300V
Parameter
Repetitive reverse current
Forward voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
Test conditions
T
j
=150
°
C, V
RRM
applied
T
j
=25
°
C, I
FM
=50A, instantaneous meas.
I
FM
=50A, di/dt=–100A/
μ
s, V
R
=300/600V*
1
, Tj=150
°
C
Junction to case
Case to fin, conductive grease applied
Min.
Typ.
Max.
10
1.5
0.8
30
0.6
0.15
ELECTRICAL CHARACTERISTICS
20, 24 class: V
R
=600V
相關PDF資料
PDF描述
RM5532 High Performance Dual Low Noise Operational Amplifier
RM5532AD High Performance Dual Low Noise Operational Amplifier
RM5532AT High Performance Dual Low Noise Operational Amplifier
RM5532D High Performance Dual Low Noise Operational Amplifier
RM5532T High Performance Dual Low Noise Operational Amplifier
相關代理商/技術參數
參數描述
RM50HG-12S 功能描述:DIODE SUPER FAST SGL 600V 50A RoHS:是 類別:分離式半導體產品 >> 單二極管/整流器 系列:- 標準包裝:100 系列:- 二極管類型:標準 電壓 - (Vr)(最大):50V 電流 - 平均整流 (Io):6A 電壓 - 在 If 時為正向 (Vf)(最大):1.4V @ 6A 速度:快速恢復 = 200mA(Io) 反向恢復時間(trr):300ns 電流 - 在 Vr 時反向漏電:15µA @ 50V 電容@ Vr, F:- 安裝類型:底座,接線柱安裝 封裝/外殼:DO-203AA,DO-4,接線柱 供應商設備封裝:DO-203AA 包裝:散裝 其它名稱:*1N3879
RM50HG-12S_01 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE NON-INSULATED TYPE
RM50HG-12S_09 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH SPEED SWITCHING USE NON-INSULATED TYPE
RM50TC-24 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER GENERAL USE INSULATED TYPE
RM50TC-2H 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER GENERAL USE INSULATED TYPE