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參數(shù)資料
| 型號(hào)： | RM20TPM-H |
| 廠商： | POWEREX INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Three-Phase Diode Bridge Modules (40 Amperes/800 Volts) |
| 中文描述： | 3 PHASE, 40 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封裝： | MODULE-5 |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 63K |
| 代理商： | RM20TPM-H |
Feb.1999
ABSOLUTE MAXIMUM RATINGS
Unit
V
V
V
MITSUBISHI DIODE MODULES
RM20TPM-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
M
400
500
110
Symbol
V
RRM
V
RSM
E
a
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Recommended AC input voltage
Unit
A
A
A
2
s
Hz
°
C
°
C
V
N·m
kg·cm
N·m
kg·cm
g
Conditions
Three-phase full wave rectifying circuit, T
C
=125
°
C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
Charged part to case
Main terminal screw M4
Mounting screw M4
Typical value
Ratings
40
400
4.2
×
10
3
1000
–40~+150
–40~+125
2500
0.98~1.47
10~15
0.98~1.47
10~15
100
Symbol
I
O
I
FSM
I
2t
f
T
j
T
stg
V
iso
—
—
Parameter
DC output current
Surge (non-repetitive) forward current
I
2t
for fusing
Maximum operating frequency
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Voltage class
H
800
900
220
Unit
mA
V
°
C/W
°
C/W
M
Limits
Symbol
I
RRM
V
FM
R
th (j-c)
R
th (c-f)
—
Parameter
Repetitive reverse current
Forward voltage
Thermal resistance
Contact thermal resistance
Insulation resistance
Test conditions
T
j
=150
°
C, V
RRM
applied
T
j
=25
°
C, I
FM
=40A, instantaneous meas.
Junction to case
Case to fin, conductive grease applied
Measured with a 500V megohmmeter between main terminal
and case
Min.
—
—
—
—
10
Typ.
—
—
—
—
—
Max.
10
1.2
0.33
0.09
—
ELECTRICAL CHARACTERISTICS
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