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參數(shù)資料
| 型號： | RM100CZ-H |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH POWER GENERAL USE INSULATED TYPE |
| 中文描述： | 大功率常規(guī)使用絕緣型 |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 45K |
| 代理商： | RM100CZ-H |
Feb.1999
–3
10
–2
10
7
–1
10
0
10
0
10
1
10
7
3
10
2
10
1
10
0
0.6
10
7
5
3
2
7
5
3
2
7
5
3
2
0.8
1.2
2.0 2.2
1.6
1.0
1.4
1.8
T
j
=25°C
70
50
30
20
7
5
3
2
0
400
2000
800
1200
1600
F
10
100
200
1800
600
1000
1400
7
5
3
2
7
5
3
2
5
3
2
0.40
0
0.05
5
3
2
0.10
0.15
0.20
0.25
0.30
0.35
200
00
80
160
40
40
120
60
140
20
100
80
120
160
160
600
40
160
20
60
80
100
120
140
80 100 120 140
THREE-PHASE
OPERATION
SINGLE-PHASE
OPERATION
DC
OPERATION
SINGLE
PHASE
OPERATION
THREE-PHASE
OPERATION
RESISTIVE, INDUCTIVE LOAD
RESISTIVE, INDUCTIVE LOAD
DC
OPERATION
1
MITSUBISHI DIODE MODULES
RM100DZ/CZ-24,-2H
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC
ALLOWABLE SURGE (NON-REPETITIVE)
FORWARD CURRENT
F
CONDUCTION TIME
(CYCLES AT 60Hz)
FORWARD VOLTAGE (V)
MAXIMUM TRANSIENT THERMAL IMPEDANCE
(JUNCTION TO CASE)
MAXIMUM POWER DISSIPATION
TIME (s)
AVERAGE FORWARD CURRENT (A)
ALLOWABLE CASE TEMPERATURE
VS. AVERAGE FORWARD CURRENT
C
°
C
AVERAGE FORWARD CURRENT (A)
T
(
°
C
S
P
相關(guān)PDF資料 |
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| RM100DZ-24 | HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RM100CZ-M | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER GENERAL USE INSULATED TYPE |
| RM100D2Z-40 | 制造商:n/a 功能描述:Power Module |
| RM100DZ | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER GENERAL USE INSULATED TYPE |
| RM100DZ-24 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
| RM100DZ-2H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
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