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參數(shù)資料
| 型號(hào)： | RKP402KS |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Dual N-channel uTrenchmos (tm) ultra low level FET |
| 中文描述： | 硅外延平面PIN二極管的天線開關(guān) |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 62K |
| 代理商： | RKP402KS |
RKP402KS
Rev.3.00 Mar 02, 2007 page 2 of 4
Absolute Maximum Ratings
(Ta = 25
°
C)
Unit
V
mA
mW
°
C
°
C
Item
Symbol
Value
30
100
100
125
55 to +125
Reverse voltage
Forward current
Power dissipation
Junction temperature
Storage temperature
Note: Per one device
V
R
I
F
Pd *
Tj
Tstg
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
I
R
V
F
C
r
f
—
Min
—
—
—
—
100
Typ
—
—
—
—
—
Max
100
1.0
0.35
1.3
—
Unit
nA
V
pF
Ω
V
Test Condition
Reverse current
Forward voltage
Capacitance
Forward resistance
ESD-Capability *
1
V
R
= 30 V
I
F
= 10 mA
V
R
= 1 V, f = 1 MHz
I
F
= 10 mA, f = 100 MHz
C = 200 pF, R = 0
Ω
, Both forward
and reverse direction 1 pulse.
Notes
:
1. Failure criterion ; I
R
>
100 nA at V
R
= 30 V
2. For MFP12 package, the material of lead is exposed for cutting plane. There for, soldering nature of lead tip
part is considered as unquestioned. Please kindly consider soldering nature.
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