參數(shù)資料
型號: RJN1163
廠商: Electronic Theatre Controls, Inc.
英文描述: Electret Capacitor Microphone Applications
中文描述: 駐極體電容器麥克風(fēng)的應(yīng)用
文件頁數(shù): 3/4頁
文件大?。?/td> 175K
代理商: RJN1163
RJN1163
RFsemi Technologies, Inc.
Rev. 4
I
D
- V
GS
Gate - to - Source Voltage, V
GS
- V
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0
200
400
600
800
1,000
D
D
μ
A
V
DS
= 5V
I
DSS
= 650
μ
A
420
μ
A
200
μ
A
V
GS(off)
- I
DSS
Drain Current, I
DSS
-
μ
A
50
70
200
300
500
700
2000
100
1000
C
G
0.2
0.3
0.5
0.7
2
-0.1
-1
V
DS
= 5V
I
D
= 1
μ
A
Ciss - V
DS
Drain - to - Source Voltage, V
DS
- V
0.7
2
3
5
7
20
30
1
10
I
2
3
5
7
20
1
10
V
GS
= 0
f = 1MHz
l yfs l - I
DSS
Drain Current, I
DSS
-
μ
A
50
70
200
300
500
700
2000
100
1000
F
f
0.2
0.3
0.5
0.7
2
3
5
1
V
DS
= 5V
V
GS
= 0V
f = 1kHz
Crss - V
DS
Drain - to - Voltage, V
DS
- V
0.7
2
3
5
7
20
1
10
R
0.2
0.3
0.5
0.7
2
3
5
0.1
1
V
GS
= 0
f = 1MHz
G
V
- I
DSS
Drain Current, I
DSS
-
μ
A
50
70
200
300
500
700
100
1000
V
v
-10
-8
-6
-4
-2
0
2
G
V
: V
CC
= 5V
V
IN
= 10mV
R
L
= 1.0k
f = 1kHz
I
DSS
: V
DS
= 5.0V
相關(guān)PDF資料
PDF描述
RK2112N 21mm Snap-In Rotary Potentiometer
RK2112N-B50K IC LOGIC 253 DUAL 4:1 MUX/DEMUX HIGH BANDWIDTH BUS SWITCH 2.5V~3.3V -40+85C QSOP-16 97/TUBE
RKP200KP 2 A low VF MEGA Schottky barrier rectifier, SOD123W (SOD2 FlatPower), Reel Pack, SMD
RKP402KS Dual N-channel uTrenchmos (tm) ultra low level FET
RKP408KS Composite Pin Diode for Antenna Switching
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RJN1164 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Junction FET
RJN63V010M/TER 制造商:ELNA America Inc 功能描述:
RJP020N06 制造商:ROHM Semiconductor 功能描述:MOSFET,Nch,Vdss=60V,Id=2A,MPT3
RJP020N06T100 功能描述:MOSFET N-CH 60V 2.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RJP1CS03DWA 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:1250V - 30A - IGBT Application: Inverter