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參數(shù)資料
| 型號(hào)： | RJK6014DPK-00-T0 |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管高速電源開關(guān) |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 111K |
| 代理商： | RJK6014DPK-00-T0 |
REJ03G1517-0200 Rev.2.00 Jun 04, 2007
Page 1 of 6
RJK6014DPK
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1517-0200
Rev.2.00
Jun 04, 2007
Features
Low on-resistance
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name:TO-3P)
D
S
G
1. Gate
2. Drain (Flange)
3. Source
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°
C/W
°
C
°
C
Item
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
I
DR
I
DR (pulse)
I
AP
E
AR
Pch
Note2
θ
ch-c
Tch
Tstg
Ratings
600
±
30
16
32
16
32
5
1.3
150
0.833
150
–55 to +150
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
μ
s, duty cycle
≤
1%
2. Value at Tc = 25
°
C
3. STch = 25
°
C, Tch
≤
150
°
C
Note1
Note1
Note3
Note3
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|---|---|
| RJK6014DPP | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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