參數(shù)資料
型號： RJK5015DPK
廠商： Renesas Technology Corp.
英文描述： 1 A low VF MEGA Schottky barrier rectifier, SOD123W (SOD2 FlatPower), Reel Pack, SMD
中文描述： 硅?通道場效應(yīng)晶體管高速電源開關(guān)
文件頁數(shù)： 3/7頁
文件大小： 109K
代理商： RJK5015DPK
RJK5015DPK
REJ03G1360-0200 Rev.2.00 Apr 18, 2007
Page 3 of 6
Main Characteristics
400
300
200
100
0
50
100
150
200
50
40
30
20
10
0
4
8
12
16
20
C
Case Temperature Tc (
°
C)
Power vs. Temperature Derating
Drain to Source Voltage V
DS
(V)
D
D
Typical Output Characteristics
Pulse Test
Gate to Source Voltage V
GS
(V)
D
D
Typical Transfer Characteristics
6 V
1
30
100
3
10
300
1000
0.2
0.1
0.05
1
0.5
0.02
0.01
Drain Current I
D
(A)
D
D
)
Static Drain to Source on State Resistance
vs. Drain Current
V
GS
= 10 V
Pulse Test
5.4 V
6.2 V
6.4 V
5.6 V
5.8 V
100
10
1
10
1000
0.1
1
1000
Drain to Source Voltage V
DS
(V)
D
D
Maximum Safe Operation Area
100
V
GS
= 5.2 V
0.5
0.4
0.3
0.2
0.1
25
0
25
50
75
100 125
150
0
Case Temperature Tc (
°
C)
S
D
)
Static Drain to Source on State Resistance
vs. Temperature
V
GS
= 10 V
Pulse Test
0
2
4
6
8
10
20
50
10
1
2
5
0.2
0.5
0.1
100
V
DS
= 10 V
Pulse Test
Tc = 75
°
C
25
°
C
25
°
C
8 V, 9 V
I
D
= 25 A
0.01
0.1
5 A
Ta = 25
°
C
10
μ
s
100
μ
s
1ms
Operation in this
area is limited by
R
DS(on)
PW = 10 ms
(1shot)
DC Operation
(Tc = 25
°
C)
10 V
12.5 A
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