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參數(shù)資料
| 型號(hào)： | RJK1525DPS-00-T2 |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | 1 A low VF MEGA Schottky barrier rectifier, SOD128 (FlatPower), Reel Pack, SMD |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管高速電源開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 113K |
| 代理商： | RJK1525DPS-00-T2 |
RJK1525DPS
Rev.2.00 Feb 08, 2007 page 2 of 6
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
|y
fs
|
R
DS(on)
Min
150
—
—
3.0
6
—
Typ
—
—
—
—
11
0.089
Max
—
1
±0.1
4.5
—
0.110
Unit
V
μ
A
μ
A
V
S
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 150 V, V
GS
= 0
V
GS
=
±
30 V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 8.5 A, V
DS
= 10 V
Note4
I
D
= 8.5 A, V
GS
= 10 V
Note4
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Body-drain diode reverse recovery
charge
Notes: 4. Pulse test
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Q
rr
—
—
—
—
—
—
—
—
—
—
—
—
—
680
150
22
22
70
47
11
18
4.2
8.3
0.88
95
0.3
—
—
—
—
—
—
—
—
—
—
1.40
—
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
μ
C
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 8.5 A
V
GS
= 10 V
R
L
= 8.8
Rg = 10
V
DD
= 120 V
V
GS
= 10 V
I
D
= 17 A
I
F
= 17 A, V
GS
= 0
Note4
I
F
= 17 A, V
GS
= 0
di
F
/dt = 100 A/
μ
s
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