
1
RHRU15090, RHRU150100
150A, 900V - 1000V Hyperfast Diodes
RHRU15090 and RHRU150100 (TA49072) are hyperfast
diodes with soft recovery characteristics (t
RR
< 90ns). They
have half the recovery time of ultrafast diodes and are silicon
nitride passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamp-
ing diodes and rectifiers in a variety of switching power sup-
plies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reduc-
ing power loss in the switching transistors.
Ordering Information
Features
Hyperfast with Soft Recovery<90ns
Operating Temperature+175
o
C
Reverse Voltage Up To1000V
Avalanche Energy Rated
Planar Construction
Applications
Switching Power Supplies
Power Switching Circuits
General Purpose
Package
JEDEC STYLE TO-218
Symbol
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RHRU15090
TO-218
RHRU15090
RHRU150100
TO-218
RHR150100
NOTE: When ordering, use the entire part number.
ANODE
CATHODE
(FLANGE)
K
A
RHRU15090
RHRU150100
UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
RWM
DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= +42
o
C)
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Avalanche Energy (L = 40mH) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
STG
, T
J
900
900
900
150
1000
1000
1000
150
V
V
V
A
300
300
A
1500
1500
A
375
50
375
50
W
mj
o
C
-65 to +175
-65 to +175
April 1995
File Number
3589.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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Copyright
Intersil Corporation 1999