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參數(shù)資料
| 型號(hào)： | RGF1D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1.0 Ampere Fast Recovery Rectifiers |
| 中文描述： | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封裝： | SMA, 2 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 99K |
| 代理商： | RGF1D |
R
RGF1A-RGF1M, Rev. E
RGF1A - RGF1M
1.0 Ampere Fast Recovery Rectifiers
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**
Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
T
A
= 25°C unless otherwise noted
1998 Fairchild Semiconductor International
Features
Glass passivated junction.
For surface mounted application.
Low forward voltage drop.
High current capability.
Easy pick and place.
High surge current capability.
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
Symbol
Parameter
Value
Units
I
O
Average Rectified Current
@ T
L
= 125
°
C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Ambient **
Thermal Resistance, Junction to Lead**
Storage Temperature Range
Operating Junction Temperature
1.0
A
i
f(surge)
30
A
P
D
1.76
11.7
85
28
W
mW/
°
C
°
C/W
°
C/W
°
C
°
C
R
θ
JA
R
θ
JL
T
stg
T
J
-65 to +175
-65 to +175
Parameter
Device
Units
1A
1B
1D
1G
1J
1K
1M
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1000
V
V
V
DC Reverse Voltage (Rated V
R
)
Maximum Reverse Current
@ rated V
R
T
A
= 25
°
C
T
A
= 125
°
C
5.0
100
μ
A
μ
A
V
Maximum Forward Voltage @ 1.0 A
Maximum Reverse Recovery Time
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
Typical Junction Capacitance
V
R
= 4.0 V, f = 1.0 MHz
1.3
150
250
500
nS
8.5
pF
2
1
0.208 (5.283)
0.188 (4.775)
0.181 (4.597)
0.157 (3.988)
0.096 (2.438)
0.078 (1.981)
0.062 (1.575)
0.055 (1.397)
0.008 (0.203)
0.002 (0.051)
0.012 (0.305)
0.006 (0.152)
0.060 (1.524)
0.030 (0.762)
0.114 (2.896)
0.098 (2.489)
+
3.93
3.73
1.67
1.47
2.38
2.18
5.49
5.29
Minimum Recommended
Land Pattern
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|---|---|
| RGF1D/1 | 制造商:Vishay Angstrohm 功能描述:Diode Switching 200V 1A 2-Pin DO-214BA Bulk |
| RGF1D/1- | 功能描述:二極管 - 通用，功率，開關(guān) 1 Amp 200 Volt 150ns 30 Amp IFSM RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| RGF1D/17- | 功能描述:二極管 - 通用，功率，開關(guān) 1 Amp 200 Volt 150ns 30 Amp IFSM RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| RGF1D/17A | 功能描述:二極管 - 通用，功率，開關(guān) 1 Amp 200 Volt 150ns 30 Amp IFSM RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| RGF1D/19A | 功能描述:二極管 - 通用，功率，開關(guān) 1 Amp 200 Volt 150ns 30 Amp IFSM RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
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