參數(shù)資料
型號(hào)： RG4BC10UD
英文描述： TRANSISTOR IGBT CO-PACK
中文描述： 晶體管IGBT的統(tǒng)籌包裝
文件頁(yè)數(shù)： 2/10頁(yè)
文件大小： 191K
代理商： RG4BC10UD
IRG4BC10UD
Parameter
Q
g
Total Gate Charge (turn-on)
Qge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
ts
Total Switching Loss
L
E
Internal Emitter Inductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
t
rr
Diode Reverse Recovery Time
Min. Typ. Max. Units
—
15
—
2.6
—
5.8
—
40
—
16
—
87
—
140
—
0.14
—
0.12
—
0.26 0.33
—
38
—
18
—
95
—
250
—
0.45
—
7.5
—
270
—
21
—
3.5
—
28
—
38
—
2.9
—
3.7
—
40
—
70
—
280
—
235
Conditions
22
4.0
8.7
—
—
130
210
—
—
I
C
= 5.0A
V
CC
= 400V
V
GE
= 15V
T
J
= 25°C
I
C
= 5.0A, V
CC
= 480V
V
GE
= 15V, R
G
= 100
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 18
nC
See Fig. 8
ns
mJ
—
—
—
—
—
—
—
—
—
42
57
5.2
6.7
60
105
—
—
T
J
= 150°C, See Fig. 11, 18
I
C
= 5.0A, V
CC
= 480V
V
GE
= 15V, R
G
= 100
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
T
J
= 25°C See Fig.
T
J
= 125°C 14 I
F
= 4.0A
T
J
= 25°C See Fig.
T
J
= 125°C 15 V
R
= 200V
T
J
= 25°C See Fig.
T
J
= 125°C 16 di/dt = 200A/μs
T
J
= 25°C See Fig.
T
J
= 125°C 17
ns
mJ
nH
pF
See Fig. 7
ns
I
rr
Diode Peak Reverse Recovery Current
A
Q
rr
Diode Reverse Recovery Charge
nC
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
During t
b
A/μs
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
600
—
—
0.54
—
2.15
—
2.61
—
2.30
3.0
—
—
-8.7
2.8
4.2
—
—
—
—
1000
—
1.5
—
1.4
—
—
±100
Conditions
—
—
2.6
—
—
6.0
—
—
250
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0mA
I
C
= 5.0A
I
C
= 8.5A
I
C
= 5.0A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
mV/°C V
CE
= V
GE
, I
C
= 250μA
S
V
CE
= 100V, I
C
= 5.0A
μA
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
V
I
C
= 4.0A
I
C
= 4.0A, T
J
= 125°C
nA
V
GE
= ±20V
V/°C
V
GE
= 15V
See Fig. 2, 5
V
V
GE(th)
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
g
fe
Forward Transconductance
I
CES
Zero Gate Voltage Collector Current
Gate Threshold Voltage
V
FM
Diode Forward Voltage Drop
1.8
1.7
See Fig. 13
I
GES
Gate-to-Emitter Leakage Current
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Details of note
through
are on the last page
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