參數(shù)資料
型號(hào): RFP45N06LE
廠商: HARRIS SEMICONDUCTOR
元件分類: JFETs
英文描述: 45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs
中文描述: 45 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 1/8頁
文件大?。?/td> 427K
代理商: RFP45N06LE
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
1-888-INTERSIL or 407-727-9207
|
Copyright
Intersil Corporation 1999.
RFP45N06LE, RF1S45N06LESM
45A, 60V, 0.028 Ohm, Logic Level
N-Channel Power MOSFETs
These are N-Channel enhancement mode power MOSFETs
manufactured using the latest manufacturing process
technology. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay
drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA49177.
Features
45A, 60V
r
DS(ON)
= 0.028
Temperature Compensating PSPICE
Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP45N06LE
TO-220AB
FP45N06L
RF1S45N06LESM
TO-263AB
F45N06LE
NOTE: Whenordering,usetheentirepartnumber.Addthesuffix9Ato
obtain the TO-263AB variant in tape and reel i.e., RF1S45N06LESM9A.
D
G
S
JEDEC TO-220AB
JEDEC TO-263AB
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
October 1999
File Number
4076.2
相關(guān)PDF資料
PDF描述
RF1S45N06SM 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs
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RFP4N05L 制造商:Harris Corporation 功能描述:
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RFP4N06L 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs