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參數(shù)資料
| 型號： | RFP30N06LE |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs |
| 中文描述： | 30 A, 60 V, 0.047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 80K |
| 代理商： | RFP30N06LE |
6-263
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
t
AV
, TIME IN AVALANCHE (ms)
0.01
0.1
1
10
I
A
,
1
10
100
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
t
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
D
,
0
20
40
60
0
1.5
3.0
4.5
6.0
7.5
V
GS
= 3V
V
GS
= 4V
V
GS
= 4.5V
V
GS
= 10V
V
GS
= 5V
80
100
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
T
C
= 25
o
C
25
o
C
175
o
C
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
3.0
4.5
6.0
7.5
1.5
0
20
40
60
I
D
,
-55
o
C
80
100
V
DD
= 15V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
T
J
, JUNCTION TEMPERATURE (
o
C)
0
0.5
1.0
1.5
2.0
2.5
3.0
-80
-40
0
40
80
120
160
200
N
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
V
GS
= 5V, I
D
= 30A
O
T
J
, JUNCTION TEMPERATURE (
o
C)
-80
-40
0
40
80
120
200
160
0
0.5
1.0
1.5
2.0
N
T
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
200
N
B
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 250
μ
A
RFP30N06LE, RF1S30N06LESM
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFP30N06LE | 制造商:Intersil Corporation 功能描述:MOSFET N LOGIC TO-220 |
| RFP30N06LE_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| RFP30N06LE_Q | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP-30N50T-S | 制造商:ANAREN 制造商全稱:Anaren Microwave 功能描述:Aluminum Nitride Termination 30 Watts, 50W |
| RFP30N6LER4541 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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