- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374588 > RFP10P03L (HARRIS SEMICONDUCTOR) 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET(10A, 30V, 0.200 Ω,P溝道功率MOS場效應管) PDF資料下載
參數(shù)資料
| 型號： | RFP10P03L |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET(10A, 30V, 0.200 Ω,P溝道功率MOS場效應管) |
| 中文描述： | 10 A, 30 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 133K |
| 代理商： | RFP10P03L |
7-3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFD10P03L, RFD10P03LSM, RFP10P03L
10A, 30V 0.200 Ohm, Logic Level,
P-Channel Power MOSFET
These products are P-Channel power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA49205.
Features
10A, 30V
r
DS(ON)
= 0.200
Temperature Compensating PSPICE
Model
PSPICE Thermal Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD10P03L
TO-251AA
10P03L
RFD10P03LSM
TO-252AA
10P03L
RFP10P03L
TO-220AB
F10P03L
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the
TO-252AA
variant in tape and reel, i.e.
RFD10P03LSM
9A..
G
D
S
JEDEC TO-251AA
JEDEC TO-252AA
JEDEC TO-220AB
SOURCE
DRAIN
DRAIN (FLANGE)
GATE
GATE
SOURCE
DRAIN (FLANGE)
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
Data Sheet
July 1999
File Number
3515.2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFD10P03L | 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET(10A, 30V, 0.200 Ω,P溝道功率MOS場效應管) |
| RFD10P03LSM | 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET(10A, 30V, 0.200 Ω,P溝道功率MOS場效應管) |
| RFP10P15 | P-Channel Power MOSFET(P溝道增強模式功率MOS場效應管) |
| RFP12N08 | 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs |
| RFP12N10 | 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFP10P12 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RFP10P15 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RFP-1-20-25-A5 | 制造商:Richco 功能描述:Ferrite core flat ribbon cable 20 wire |
| RFP-125-50TS-S | 制造商:ANAREN 制造商全稱:Anaren Microwave 功能描述:Flangeless Termination 125 Watts, 50Ohms |
| RFP-1-26-28-A5 | 制造商:Richco 功能描述:Ferrite core flat ribbon cable 26 wire |
發(fā)布緊急采購，3分鐘左右您將得到回復。