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參數(shù)資料
| 型號(hào)： | RFL1P10 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs |
| 中文描述： | 1000 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 42K |
| 代理商： | RFL1P10 |
6-1
Semiconductor
Features
1A, -80V and -100V
r
DS(ON)
= 3.65
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
Description
These are P-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated cir-
cuits.
Formerly developmental type TA9400.
Symbol
Packaging
JEDEC TO-205AF
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFL1P08
TO-205AF
RFL1P08
RFL1P10
TO-205AF
RFL1P10
NOTE: When ordering, include the entire part number.
G
D
S
DRAIN
(CASE)
SOURCE
GATE
July 1998
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1998
File Number
1535.2
RFL1P08,
RFL1P10
1A, -80V and -100V, 3.65 Ohm,
P-Channel Power MOSFETs
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