參數(shù)資料
型號: RFH10N50
廠商: HARRIS SEMICONDUCTOR
元件分類: JFETs
英文描述: CAP 1000PF 200V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22
中文描述: 10 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC
文件頁數(shù): 1/4頁
文件大?。?/td> 32K
代理商: RFH10N50
Semiconductor
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS
|
Copyright
Harris Corporation 1998
RFH10N45, RFH10N50
10A, 450V and 500V 0.600 Ohm,
N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA17435.
Features
10A, 450V and 500V
r
DS(ON)
= 0.600
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-218AC
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFH10N45
TO-218AC
RFH10N45
RFH10N50
TO-218AC
RFH10N50
NOTE: When ordering, include the entire part number.
G
D
S
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
Data Sheet
October 1998
File Number
1629.2
[ /Title
(RFH10
N45,
RFH10N
50)
/Subject
(10A,
450V
and
500V,
0.600
Ohm,
N-Chan-
nel
Power
MOS-
FETs)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor,
N-Chan-
nel
Power
MOS-
FETs,
TO-
218AC)
/Creator
()
/DOCIN
FO pdf-
mark
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