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參數(shù)資料
| 型號(hào)： | RFG50N05L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs |
| 中文描述： | 50 A, 50 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 376K |
| 代理商： | RFG50N05L |
2002 Fairchild Semiconductor Corporation
RFG50N05L, RFP50N05L Rev. B
RFG50N05L, RFP50N05L
50A, 50V, 0.022 Ohm, Logic Level,
N-Channel Power MOSFETs
These are logic-level N-channel power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI
integrated circuits gives optimum utilization of silicon,
resulting in outstanding performance. They were designed
for use with logic-level (5V) driving sources in applications
such as programmable controllers, automotive switching,
switching regulators, switching converters, motor relay
drivers and emitter switches for bipolar transistors. This
performance is accomplished through a special gate oxide
design which provides full rated conductance at gate bias in
the 3V - 5V range, thereby facilitating true on-off power
control directly from integrated circuit supply voltages.
Formerly developmental type TA09872.
Features
50A, 50V
r
DS(ON)
= 0.022
UIS SOA Rating Curve (Single Pulse)
Design Optimized for 5V Gate Drive
Can be Driven Directly from CMOS, NMOS, TTL Circuits
Compatible with Automotive Drive Requirements
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC STYLE TO-247
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG50N05L
TO-247
RFG50N05L
RFP50N05L
TO-220AB
RFP50N05L
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RFP50N05L9A.
D
G
S
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
Data Sheet
January 2002
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