- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374587 > RFD7N10LE (HARRIS SEMICONDUCTOR) 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs PDF資料下載
參數(shù)資料
| 型號： | RFD7N10LE |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs |
| 中文描述： | 7 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 361K |
| 代理商： | RFD7N10LE |
1
File Number
3598.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFD7N10LE, RFD7N10LESM
7A, 100V, 0.300 Ohm, N-Channel, Logic
Level, Power MOSFETs
These N-Channel power MOSFETs are manufactured using
a modern process. This process, which uses feature sizes
approaching those of LSI integrated circuits gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as
switching regulators, switching converters, motor drivers,
relay drivers and emitter switches for bipolar transistors. This
performance is accomplished through a special gate oxide
design which provides full rated conductance at gate bias in
the 3V to 5V range, thereby facilitating true on-off power
control directly from logic level (5V) integrated circuits.
Formerly developmental type TA49046.
Features
7A, 100V
r
DS(ON)
= 0.300
Temperature Compensating PSPICE
Model
Can be Driven Directly from CMOS, NMOS, TTL Circuits
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD7N10LE
TO-251AA
7N10L
RFD7N10LESM
TO-252AA
7N10LE
NOTE: Whenordering,usetheentirepartnumber. Addsuffix9A toob-
tain the TO-252AA variant in the tape and reel, i.e., RFD7N10LESM9A.
D
G
S
JEDEC TO-251AA
JEDEC TO-252AA
SOURCE
DRAIN
DRAIN
GATE
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
Data Sheet
October 1999
相關PDF資料 |
PDF描述 |
|---|---|
| RFD7N10LESM | 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs |
| RFF60P06 | 25A⒂, 60V, 0.030 Ohm, P-Channel Power MOSFET |
| RFF70N06 | 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET |
| RFG40N10 | CAP 180PF 200V 1% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 |
| RFP40N10 | CAP 470PF 200V 5% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFD7N10LESM | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs |
| RFD8P03LSM | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RFD8P03LSM96 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFD8P05 | 功能描述:MOSFET TO-251AA P-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD8P05SM | 功能描述:MOSFET TO-252AA P-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。