參數(shù)資料
型號(hào)： RFD15N06LESM
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs(15A, 60V, 0.065 Ω,邏輯電平,N溝道功率MOS場(chǎng)效應(yīng)管)
中文描述： 15 A, 60 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 95K
代理商： RFD15N06LESM
6-149
File Number
4079.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFD15N06LE, RFD15N06LESM
15A, 60V 0.065 Ohm, ESD Rated, Logic
Level, N-Channel Power MOSFETs
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. These transistors can be operated directly
from integrated circuits.
Formerly developmental type TA49165.
Features
15A, 60V
r
DS(ON)
= 0.065
2kV ESD Protected
Temperature Compensating PSPICE Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD15N06LE
TO-251AA
F15N6L
RFD15N06LESM
TO-252AA
F15N6L
NOTE: Whenordering,usetheentirepartnumber.Fororderingintape
and reel, add the suffix 9A to the part number, i.e. RFD15N06LESM9A.
G
D
S
JEDEC TO-251AA
JEDEC TO-252AA
SOURCE
DRAIN
DRAIN (FLANGE)
GATE
GATE
SOURCE
DRAIN (FLANGE)
Data Sheet
April 1999
相關(guān)PDF資料
PDF描述
RFD15P05SM 15A, 50V, 0.150 Ohm,N-Channel PowerMOSFET(15A, 50V, 0.150 Ω,P溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管)
RFD15P05 15A, 50V, 0.150 Ohm,N-Channel PowerMOSFET(15A, 50V, 0.150 Ω,P溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管)
RFD15P06SM 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs(15A, 60V, 0.150 Ω,P溝道功率MOS場(chǎng)效應(yīng)管)
RFD15P06 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs(15A, 60V, 0.150 Ω,P溝道功率MOS場(chǎng)效應(yīng)管)
RFD16N02L 16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET(16A, 20V, 0.022 Ω, N溝道,邏輯電平,功率MOS場(chǎng)效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFD15P05 功能描述:MOSFET TO-251AA P-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD15P05SM 功能描述:MOSFET TO-252AA P-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD15P05SM9A 功能描述:MOSFET TO-252 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD15P06 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs
RFD15P06SM 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
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