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參數(shù)資料
| 型號： | RFD12N06RLESM |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| 中文描述： | 18 A, 60 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 215K |
| 代理商： | RFD12N06RLESM |
2002 Fairchild Semiconductor Corporation
RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Rev. B
RFD12N06RLE, RFD12N06RLESM,
RFP12N06RLE
17A, 60V, 0.071 Ohm, N-Channel, Logic
Level UltraFET Power MOSFET
Packaging
Symbol
Features
Ultra Low On-Resistance
- r
DS(ON)
= 0.063
,
V
GS
=
10V
- r
DS(ON)
= 0.071
,
V
GS
=
5V
Simulation Models
- Temperature Compensated PSPICE
and SABER
Electrical Models
- Spice and SABER
Thermal Impedance Models
- www.fairchildsemi.com
Peak Current vs Pulse Width Curve
UIS Rating Curve
Switching Time vs R
GS
Curves
Ordering Information
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
JEDEC TO-251AA
JEDEC TO-252AA
JEDEC TO-220AB
DRAIN
(FLANGE)
DRAIN
GATE
SOURCE
RFD12N06RLE
RFD12N06RLESM
GATE
SOURCE
DRAIN
(FLANGE)
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
RFP12N06RLE
D
G
S
PART NUMBER
PACKAGE
BRAND
RFD12N06RLE
TO-251AA
12N6LE
RFD12N06RLESM
TO-252AA
12N6LE
RFP12N06RLE
TO-220AB
12N06RLE
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, i.e. RFD12N06RLESM9A.
RFD12N06RLE, RFD12N06RLESM,
RFP12N06RLE
60
60
±
16
UNITS
V
V
V
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Continuous (T
C
= 135
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 135
o
C, V
GS
= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
NOTE:
1. T
J
= 25
o
C to 150
o
C.
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
17
18
8
8
Figure 4
A
A
A
A
Figures 6, 17, 18
49
0.327
-55 to 175
W
W/
o
C
o
C
300
260
o
C
o
C
Data Sheet
January 2002
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFD12N06RLE | 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| RFD12N06RLE | 12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs(12A, 60V, 0.135 Ω, N溝道,邏輯電平,功率MOS場效應(yīng)管) |
| RFD12N06RLESM | 12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs(12A, 60V, 0.135 Ω, N溝道,邏輯電平,功率MOS場效應(yīng)管) |
| RFP12N06RLE | 12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs(12A, 60V, 0.135 Ω, N溝道,邏輯電平,功率MOS場效應(yīng)管) |
| RFD14N05L | 14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 邏輯電平N 溝道功率MOS場效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFD12N06RLESM9A | 功能描述:MOSFET 60V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD14LN05SM | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| RFD14N05 | 功能描述:MOSFET TO-251AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD14N05 | 制造商:Intersil Corporation 功能描述:MOSFET N I-PAK |
| RFD14N05_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
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