參數(shù)資料
型號： RF4E20N50S
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 20A I(D) | TO-268AA
中文描述： 晶體管| MOSFET的| N溝道| 500V五（巴西）直| 20A條（?。﹟對268AA
文件頁數(shù)： 1/8頁
文件大?。?/td> 186K
代理商： RF4E20N50S
2002 Fairchild Semiconductor Corporation
RF4E20N50S revA1
RF4E20N50S
20A, 500V, 0.240 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17465.
Features
20A, 500V
r
DS(ON)
= 0.240
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 “Guidelines for Soldering Surface Mount Compo-
nents to PC Boards”
Symbol
Packaging
JEDEC TO-268AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
RF4E20N50S
TO-268AA
RF4E20N50S
NOTE: When ordering, use the entire part number.
D
G
S
SOURCE
GATE
DRAIN
(TAB)
Data Sheet
May 2002
[ /Title
(HUF75
337G3,
HUF753
37P3,
HUF753
37S3,
HUF753
37S3S)
/Subject
(62A,
55V,
0.014
Ohm, N-
Channel
UltraFE
T Power
MOS-
FETs)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Channel
UltraFE
T Power
MOS-
FETs,
TO-247,
TO-
220AB,
TO-
262AA,
TO-
263AB)
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