參數(shù)資料
型號(hào)： RF3120PCBA
廠商： RF Micro Devices, Inc.
英文描述： 3V 1800MHZ LINEAR AMPLIFIER MODULE
中文描述： 3V的1800兆赫的線性放大器模塊
文件頁(yè)數(shù)： 1/6頁(yè)
文件大小： 62K
代理商： RF3120PCBA
2-257
2
P
Preliminary
Produc t Desc ription
Ordering Information
Typic al Applic ations
Features
Func tional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs HBT
Si Bi-CMOS
SiGe HBT
GaAs MESFET
Si CMOS
3
VREG
2
RF IN
1
VCC1
6
RF OUT
7
GND
5
VCC2
4
V
RF3120
3V 1800MHZ LINEAR AMPLIFIER MODULE
3V CDMA Korean-PCS Handsets
Spread-Spectrum Systems
The RF3120 is a high-power, high-efficiency linear ampli-
fier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in dual-mode
3V CDMA hand-held digital cellular equipment, spread-
spectrum
systems,
and
1750MHz to 1780MHz band. The RF3120 has a digital
bias control voltage for low current in standby mode. The
device is self-contained with 50
input and output that is
matched to obtain optimum power, efficiency, and linear-
ity
characteristics.
The
module
6mmx6mm land grid array with backside ground.
other
applications
in
the
is
an
ultra-small
Input/Output Internally Matched @ 50
Single 3V Supply
29dBm Linear Output Power
26dB Linear Gain
32% Linear Efficiency
RF3120
RF3120 PCBA
3V 1800MHz Linear Amplifier Module
Fully Assembled Evaluation Board
2
Rev A0 010906
6.0 sq
0.100
3.000
4.390
0.600
0.800 sq
typ
NOTE:
Nominal thickness, 1.55 mm.
1.700
0.100
2.500
Dimensions in mm.
Package S tyle: LGM (6 mmx 6 mm)
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