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參數(shù)資料
| 型號(hào)： | RF3100-3K |
| 廠商： | RF MICRO DEVICES INC |
| 元件分類： | 衰減器 |
| 英文描述： | 3V 1700MHZ LINEAR AMPLIFIER MODULE |
| 中文描述： | 1750 MHz - 1780 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封裝： | 6 X 6 MM, LGM, 7 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 116K |
| 代理商： | RF3100-3K |
2-273
2
P
Produc t Desc ription
Ordering Information
Typic al Applic ations
Features
Func tional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs HBT
Si Bi-CMOS
SiGe HBT
GaAs MESFET
Si CMOS
3
VREG
2
RF IN
1
VCC1
6
RF OUT
7
GND
5
VCC2
4
V
RF3100-3K
3V 1700MHZ LINEAR AMPLIFIER MODULE
3V CDMA Korean-PCS Handsets
Spread-Spectrum Systems
Designed for Compatibility with Qualcomm
Chipsets
The RF3100-3K is a high-power, high-efficiency linear
amplifier IC targeting 3V hand-held systems. The device
is manufactured on an advanced Gallium Arsenide Het-
erojunction Bipolar Transistor (HBT) process, and has
been designed for use as the final RF amplifier in dual-
mode 3V CDMA hand-held digital cellular equipment,
spread-spectrum systems, and other applications in the
1750MHz to 1780MHz band. The RF3100-3K has a digi-
tal control line for low power application to reduce the cur-
rent drain. The device is self-contained with 50
input
and output that is matched to obtain optimum power, effi-
ciency, and linearity characteristics. The module is an
ultra-small 6mmx6mm land grid array with backside
ground.
Input/Output Internally Matched@50
Single 3V Supply
28dBm Linear Output Power
-141dBm/Hz Noise Power
35% Linear Efficiency
45mA Idle Current (Low Power Mode)
RF3100-3K
RF3100-3K PCBA Fully Assembled Evaluation Board
3V 1700MHz Linear Amplifier Module
2
Rev A3 011017
6.0 sq
0.100
3.000
4.390
0.600
0.800 sq
typ
NOTE:
Nominal thickness, 1.55 mm.
1.700
0.100
2.500
Dimensions in mm.
Package S tyle: LGM (6 mmx 6 mm)
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