參數(shù)資料
型號(hào): RF2363PCBA
廠商: RF Micro Devices, Inc.
英文描述: DUAL-BAND 3V LOW NOISE AMPLIFIER
中文描述: 雙頻3V的低噪聲放大器
文件頁數(shù): 1/10頁
文件大?。?/td> 167K
代理商: RF2363PCBA
4-199
4
G
A
Preliminary
Produc t Desc ription
Ordering Information
Typic al Applic ations
Features
Func tional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs HBT
Si Bi-CMOS
SiGe HBT
GaAs MESFET
Si CMOS
1
2
3
4
8
7
6
5
EN1
RF OUT2
GND
RF OUT1
EN2
RF IN2
GND
RF IN1
RF2363
DUAL-BAND 3V LOW NOIS E AMPLIFIER
GSM/DCS Dual-Band Handsets
Cellular/PCS Dual-Band Handsets
General Purpose Amplification
Commercial and Consumer Systems
The RF2363 is a dual-band Low Noise Amplifier
designed for use as a front-end for 950MHz GSM/
1850MHz DCS applications and may be used for dual-
band cellular/PCS applications. The 900MHz LNA is a
single-stage amplifier; the 1900MHz LNA is a 2-stage
amplifier. The part may also be tuned for applications in
other frequency bands. The device has an excellent com-
bination of low noise figure and high linearity at a very low
supply current. It is packaged in a very small industry
standard SOT 8-lead plastic package.
Low Noise and High Intercept Point
18dB Gain at 900MHz
21dB Gain at 1900MHz
Low Supply Current
Single 2.5V to 5.0V Power Supply
Very Small SOT-23-8 Plastic Package
RF2363
RF2363 PCBA
Dual-Band 3V Low Noise Amplifier
Fully Assembled Evaluation Board
4
Rev B2 010129
0.127
0°MIN
0.55
0.35
0.365
1.59
3.00
2.60
2.80
0.650
0.15
0.05
1.44
1.04
T
*When Pin 1 is in upper
left, text reads downward
(as shown).
Package S tyle: SOT, 8-Lead
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