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參數(shù)資料
| 型號(hào)： | RF2301 |
| 廠商： | RF MICRO DEVICES INC |
| 元件分類： | 衰減器 |
| 英文描述： | HIGH ISOLATION BUFFER AMPLIFIER |
| 中文描述： | 300 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | PLASTIC, SOIC-8 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 198K |
| 代理商： | RF2301 |
4-37
4
G
A
Produc t Desc ription
Ordering Information
Typic al Applic ations
Features
Func tional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs HBT
Si Bi-CMOS
SiGe HBT
GaAs MESFET
Si CMOS
1
2
3
4
8
7
6
5
GND
GND
RF IN
GND
VDD1
VDD2
RF OUT
GND
RF2301
HIGH IS OLAT ION BUF FE R AMPLIFIER
Local Oscillator Buffer Amplifiers
FDD and TDD Communication Systems
Commercial and Consumer Systems
Portable Battery-Powered Equipment
Wireless LAN
ISM Band Applications
The RF2301 is a high reverse isolation buffer amplifier.
The device is manufactured on a low-cost Gallium Ars-
enide MESFET process, and has been designed for use
as a general purpose buffer in high-end communication
systems operating at frequencies from less than 300MHz
to higher than 2500MHz. With +5dBm output power, it
may also be used as a driver in transmitter applications.
The device is packaged in an 8-lead plastic package. The
product is self-contained, requiring just a resistor and
blocking capacitors to operate. The output power, com-
bined with 50dB reverse isolation at 900MHz allows
excellent buffering of LO sources to impedance changes.
The device can be used in 3V battery applications. The
unit has a total gain of 17dB with only 14mA current from
a 3V supply.
Single 2.7V to 6.0V Supply
+4dBm Output Power
21dB Small Signal Gain
50dB Reverse Isolation at 900MHz
Low DC Current Consumption of 14mA
300MHz to 2500MHz Operation
RF2301
RF2301 PCBA
High Isolation Buffer Amplifier
Fully Assembled Evaluation Board
4
Rev A8 010717
0.244
0.229
0.157
0.150
0.018
0.014
0.050
0.068
0.053
NOTES:
1. Shaded lead is Pin 1.
2. All dimensions are excluding
mold flash.
3. Lead coplanarity -
0.005 with respect to datum "A".
Dimensions in mm
0.196
0.189
0.008
0.004
-A-
8° MAX
0° MIN
0.034
0.016
0.009
0.007
Pac kage S tyle: S OIC-8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RF2301PCBA | HIGH ISOLATION BUFFER AMPLIFIER |
| RF2302 | BROADBAND LINEAR VARIABLE GAIN AMPLIFIER |
| RF2302PCBA-H | BROADBAND LINEAR VARIABLE GAIN AMPLIFIER |
| RF2302PCBA-L | BROADBAND LINEAR VARIABLE GAIN AMPLIFIER |
| RF2304 | GENERAL PURPOSE LOW-NOISE AMPLIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF2301PCBA | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:HIGH ISOLATION BUFFER AMPLIFIER |
| RF2302 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:BROADBAND LINEAR VARIABLE GAIN AMPLIFIER |
| RF2302PCBA-H | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:BROADBAND LINEAR VARIABLE GAIN AMPLIFIER |
| RF2302PCBA-L | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:BROADBAND LINEAR VARIABLE GAIN AMPLIFIER |
| RF2303PB005 | 制造商:Hubbell Wiring Device-Kellems 功能描述:LINKOSITY FEM. RCPT. 20A SNIG, 3W, 5' |
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