參數(shù)資料
型號: RF2125PCBA
廠商: RF Micro Devices, Inc.
英文描述: HIGH POWER LINEAR AMPLIFIER
中文描述: 大功率線性放大器
文件頁數(shù): 1/6頁
文件大?。?/td> 104K
代理商: RF2125PCBA
2-61
2
P
Produc t Desc ription
Ordering Information
Typic al Applic ations
Features
Func tional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs HBT
Si Bi-CMOS
SiGe HBT
GaAs MESFET
Si CMOS
SeeUpgradedProductRF2125P
PACKAGE BASE
1
2
3
4
8
7
6
5
RF IN
RF IN
PC
VCC
RF OUT
RF OUT
RF OUT
RF OUT
BIAS
CIRCUIT
GND
RF2125
HIGH POWER LINEAR AMPLIFIER
PCS Communication Systems
Digital Communication Systems
DECT Cordless Applications
Commercial and Consumer Systems
Portable Battery Powered Equipment
The RF2125 is a high power, high efficiency linear ampli-
fier IC. The device is manufactured on an advanced Gal-
lium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in digital PCS phone transmitters and base sta-
tions requiring linear amplification operating between
1500MHz and 2200MHz. It will also function as a high
efficiency amplifier for constant envelope applications
such as DECT. The device is packaged in an 8-lead
ceramic package with a backside ground. The device is
self-contained with the exception of the output matching
network and power supply feed line. It produces a typical
output power level of 1W.
Single 2.7V to 7.5V Supply
1W Output Power
14dB Gain
45% Efficiency
Power Down Mode
1500MHz to 2200MHz Operation
RF2125
RF2125 PCBA
High Power Linear Amplifier
Fully Assembled Evaluation Board
2
Rev A7 010112
.315
.305
.180 SQ MAX
.017
.013
.050
.006
.004
4°MAX
0°MIN
.017
.013
.057 MAX
.004
.000
1
.166
SQ
Metal lid and base, gold plated
Package S tyle: S OP-8-C
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RF2125PPCBA 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:HIGH POWER LINEAR AMPLIFIER
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RF2126PCBA 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:HIGH POWER LINEAR AMPLIFIER