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參數(shù)資料
| 型號(hào)： | RF2117PCBA |
| 廠商： | RF Micro Devices, Inc. |
| 英文描述： | HIGH EFFICIENCY 400MHZ AMPLIFIER |
| 中文描述： | 400MHz的高效率放大器 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 173K |
| 代理商： | RF2117PCBA |
2-47
2
P
Preliminary
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
http://www.rfmd.comSi BJT
Si Bi-CMOS
GaAs MESFET
Si CMOS
GaAs HBT
SiGe HBT
Bias
Circuits
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VREG
VCC1
LTUNE
Q1C
GND
RFIN
NC
VPD
NC
NC
RFOUT
RFOUT
RFOUT
NC
NC
NC
RF2117
3.6V Analog Handsets
Analog Communication Systems
400MHz Industrial Radios
Portable Battery Powered Equipment
The RF2117 is a high power amplifier IC. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in analog cellu-
lar phone transmitters between 400MHz and 500MHz or
ISM applications operating at 433MHz. The device is
packaged in a low cost 16-lead plastic package with a
metal backside. The device is self-contained with the
exception of the output matching network and power sup-
ply feed line.
Single 3V to 5.5V Supply
Up to 2W CW Output Power
33dB Small Signal Gain
>50% Efficiency
400MHz to 500MHz Operation
RF2117
RF2117 PCBA
High Efficiency 400MHz Amplifier
Fully Assembled Evaluation Board
Rev A0 991201
.065
.393
.244
.035
8°MAX
5°MIN
.0098
.158
.021
.050
1
.004
EXPOSED
HEATSINK
.287
.087
Package Weight
typically 0.22 grams
!"
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