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參數(shù)資料
| 型號： | RF1S25N06SM |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 25 A, 60 V, 0.047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 106K |
| 代理商： | RF1S25N06SM |
4-511
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFP25N06, RF1S25N06SM
25A, 60V 0.047 Ohm, N-Channel Power
MOSFETs
These N-Channel power MOSFETs are manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA09771.
Features
25A, 60V
r
DS(ON)
= 0.047
Temperature Compensating PSPICE
Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO- 220AB
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP25N06
TO-220AB
RFP25N06
RF1S25N06SM
TO-263AB
F1S25N06
NOTE: When ordering use the entire part number. Add the suffix, 9A,
toobtaintheTO-263ABvariantintapeandreel,e.g.RF1S25N06SM9A.
G
D
S
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
July 1999
File Number
1492.4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RF1S25N06 | 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs |
| RF1S25N06SM | 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs |
| RF1S30N06LESM | 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs(30A, 60V、額定ESD值0.047Ω邏輯電平N溝道功率MOS場效應(yīng)管) |
| RFP30N06LE | 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs |
| RFP30N06LE | 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1S25N06SM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S25N06SMR4643 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S30N06LE | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S30N06LESM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S30N06LESM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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